DataSheet26.com

HMC429LP4E PDF даташит

Спецификация HMC429LP4E изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «MMIC VCO w/ BUFFER AMPLIFIER».

Детали детали

Номер произв HMC429LP4E
Описание MMIC VCO w/ BUFFER AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

6 Pages
scroll

No Preview Available !

HMC429LP4E Даташит, Описание, Даташиты
v02.0805
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• 802.11a, HiperLAN WLAN
• VSAT, UNII & Microwave Radio
• Test Equipment & Industrial Controls
• Military
Functional Diagram
11
HMC429LP4 / 429LP4E
MMIC VCO w/ BUFFER
AMPLIFIER, 4.45 - 5.0 GHz
Features
Pout: +4.0 dBm
Phase Noise: -105 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 30 mA
QFN Leadless SMT Package, 16 mm2
General Description
The HMC429LP4 & HMC429LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 4.45 to 5.0 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.0 dBm typical from a
single supply of 3.0V @ 30mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4x4
mm surface mount package.
11 - 72
Electrical Specifications, TA = +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Min.
1.0
0
Typ.
4.45 - 5.0
4.0
-105
30
6
-11
-23
10
14
0.4
Max.
10
10
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com









No Preview Available !

HMC429LP4E Даташит, Описание, Даташиты
v02.0805
Frequency vs. Tuning Voltage, T= 25°C
5.2
5
4.8
4.6
Vcc=2.75V
4.4 Vcc=3.0V
Vcc=3.25V
4.2
4
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc= +3V
340
290
+25 C
240 +85 C
-40 C
190
140
90
40
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Phase Noise vs. Tuning Voltage
-70
-80
-90
-100
10 KHz Offset
100 KHz Offset
-110
-120
0
2468
TUNING VOLTAGE (VOLTS)
10
HMC429LP4 / 429LP4E
MMIC VCO w/ BUFFER
AMPLIFIER, 4.45 - 5.0 GHz
Frequency vs. Tuning Voltage, Vcc= +3V
5.2
5
4.8
4.6
+25 C
4.4 +85 C
-40 C
4.2
4
0 1 2 3 4 5 6 7 8 9 10
TUNING VOLTAGE (VOLTS)
Output Power vs.
Tuning Voltage, Vcc= +3V
8
7
6
5
4
3
2 +25 C
+85 C
1 -40 C
0
012345678
TUNING VOLTAGE (VOLTS)
9 10
11
Typical SSB Phase Noise @ Vtune= +5V
0
-25
+25 C
-50 +85 C
- 40 C
-75
-100
-125
-150
103
104 105 106
OFFSET FREQUENCY (Hz)
107
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 73









No Preview Available !

HMC429LP4E Даташит, Описание, Даташиты
v02.0805
HMC429LP4 / 429LP4E
MMIC VCO w/ BUFFER
AMPLIFIER, 4.45 - 5.0 GHz
11
Absolute Maximum Ratings
Vcc
Vtune
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 6.28 mW/°C above 85°C)
Storage Temperature
Operating Temperature
+3.5 Vdc
0 to +11V
135 °C
565 W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
2.75 21
3.0 30
3.25
38
Note: VCO will operate over full voltage range shown above.
11 - 74
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOT FOR SUGGESTED
LAND PATTERN.
Part Number
HMC429LP4
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC429LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H429
XXXX
H429
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com










Скачать PDF:

[ HMC429LP4E.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HMC429LP4MMIC VCO w/ BUFFER AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC429LP4EMMIC VCO w/ BUFFER AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск