|
|
Datasheet C3M0065100K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C3M0065100K | Silicon Carbide Power MOSFET VDS 1000 V
C3M0065100K
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage dis |  Cree | mosfet |
C3M Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C3M0065090D | Silicon Carbide Power MOSFET VDS 900 V
C3M0065090D
ID @ 25˚C
36 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low Cree mosfet | | |
| 2 | C3M0065090J | Silicon Carbide Power MOSFET VDS 900 V
C3M0065090J
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • New low impedance package with driver source pin • 7mm of creepage distance Cree mosfet | | |
| 3 | C3M0065100K | Silicon Carbide Power MOSFET VDS 1000 V
C3M0065100K
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage dis Cree mosfet | | |
| 4 | C3M0120090D | Silicon Carbide Power MOSFET VDS 900 V
C3M0120090D
ID @ 25˚C
23 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with lo Cree mosfet | | |
| 5 | C3M0120090J | Silicon Carbide Power MOSFET VDS 900 V
C3M0120090J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with lo Cree mosfet | | |
| 6 | C3M0280090D | Silicon Carbide Power MOSFET VDS 900 V
C3M0280090D
ID @ 25˚C 11.5 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with l Cree mosfet | | |
| 7 | C3M0280090J | Silicon Carbide Power MOSFET VDS 900 V
C3M0280090J
ID @ 25˚C
11 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with lo Cree mosfet | |
| Esta página es del resultado de búsqueda del C3M0065100K. Si pulsa el resultado de búsqueda de C3M0065100K se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |