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C3M0280090J PDF даташит

Спецификация C3M0280090J изготовлена ​​​​«Cree» и имеет функцию, называемую «Silicon Carbide Power MOSFET».

Детали детали

Номер произв C3M0280090J
Описание Silicon Carbide Power MOSFET
Производители Cree
логотип Cree логотип 

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C3M0280090J Даташит, Описание, Даташиты
VDS 900 V
C3M0280090J
ID @ 25˚C
11 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 280 m
N-Channel Enhancement Mode
Features
Package
New C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
New low impedance package with driver source
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
TAB
Drain
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0280090J
7L D2PAK
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
900
-8/+18
-4/+15
11
7
ID(pulse) Pulsed Drain Current
22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
50
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 15 V, TC = 25˚C
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1 C3M0280090J Rev. - , 12-2015









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C3M0280090J Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
Min.
900
1.8
Typ.
2.1
1.6
1
10
280
385
3.6
3.1
Ciss Input Capacitance
150
Coss Output Capacitance
20
Crss Reverse Transfer Capacitance
2
Eoss Coss Stored Energy
4.5
EON Turn-On Switching Energy
19
EOFF Turn Off Switching Energy
td(on) Turn-On Delay Time
3.7
10.5
tr Rise Time
6.5
td(off)
Turn-Off Delay Time
11
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
4
26
2.8
3.4
9.5
Max.
3.5
100
250
360
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 1.2 mA
VDS = VGS, ID = 1.2 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 7.5 A
VGS = 15 V, ID = 7.5 A, TJ = 150ºC
VDS= 15 V, IDS= 7.5 A
VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A,
RG(ext) = 2.5Ω, L= 220 μH, TJ = 150ºC
VDD = 400 V, VGS = -4 V/15 V
ns
ID = 7.5 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
nC ID = 7.5 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
4.8
4.4
IS Continuous Diode Forward Current
9
IS, pulse
Diode pulse Current
22
trr Reverse Recover time
20
Qrr Reverse Recovery Charge
47
Irrm Peak Reverse Recovery Current
3.4
Note (2): When using SiC Body Diode the maximum recommended VGS = -4V
Thermal Characteristics
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 4 A
VGS = -4 V, ISD = 4 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 7.5 A, VR = 400 V
dif/dt = 600 A/µs, TJ = 150 °C
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
29
Note(3)
Fig. 27,
29
Note(3)
Fig. 12
Note
Fig. 8, 9,
10
Note (2)
Note (2)
Note (2)
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
2.5
40
Unit
°C/W
Test Conditions
Note
Fig. 21
2 C3M0280090J Rev. - , 12-2015









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C3M0280090J Даташит, Описание, Даташиты
Typical Performance
20
Conditions:
18 TJ = -55 °C
tp = < 200 µs
16
14
12
10
8
6
4
2
0
02
VGS = 15 V
VGS = 13 V
VGS = 11 V
VGS = 9 V
VGS = 7 V
468
Drain-Source Voltage, VDS (V)
10
Figure 1. Output Characteristics TJ = -55 ºC
20
Conditions:
18 TJ = 150 °C
tp = < 200 µs
16
14
12
10
8
6
4
2
0
02
VGS = 15 V
VGS = 13 V
VGS = 11 V
VGS = 9 V
VGS = 7 V
468
Drain-Source Voltage, VDS (V)
10
Figure 3. Output Characteristics TJ = 150 ºC
600
Conditions:
VGS = 15 V
500 tp < 200 µs
400 TJ = 150 °C
300 TJ = -55 °C
TJ = 25 °C
200
100
0
0 5 10 15
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
20
3 C3M0280090J Rev. - , 12-2015
20
Conditions:
18 TJ = 25 °C
tp = < 200 µs
16
14
12
10
8
6
4
2
0
02
VGS = 15 V
VGS = 13 V
VGS = 11 V
VGS = 9 V
VGS = 7 V
468
Drain-Source Voltage, VDS (V)
10
Figure 2. Output Characteristics TJ = 25 ºC
2.5
Conditions:
IDS = 7 A
VGS = 15 V
2.0 tp < 200 µs
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
600
Conditions:
550 IDS = 7 A
500 tp < 200 µs
450
400
350
300
250
200
150
100
50
0
-50
-25
VGS = 11 V
VGS = 13 V
VGS = 15 V
0 25 50 75 100
Junction Temperature, TJ (°C)
125
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150










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C3M0280090JSilicon Carbide Power MOSFETCree
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