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HMC584LP5E PDF даташит

Спецификация HMC584LP5E изготовлена ​​​​«Hittite Microwave» и имеет функцию, называемую «GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO».

Детали детали

Номер произв HMC584LP5E
Описание GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO
Производители Hittite Microwave
логотип Hittite Microwave логотип 

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HMC584LP5E Даташит, Описание, Даташиты
HMC584LP5 / 584LP5E
v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 12.5 - 13.9 GHz
Typical Applications
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Features
Dual Output: Fo = 12.5 - 13.9 GHz
Fo/2 = 6.25 - 6.95 GHz
Pout: +10 dBm
Phase Noise: -110 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
Functional Diagram
General Description
The HMC584LP5 & HMC584LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC584LP5 & HMC584LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
8 temperature, shock, and process due to the oscillator’s
monolithic structure. Power output is +10 dBm typical
from a +5V supply voltage. The prescaler and RF/2
functions can be disabled to conserve current if not
required. The voltage controlled oscillator is packaged
in a leadless QFN 5x5 mm surface mount package,
and requires no external matching components.
8-1
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 12V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RFOUT
RFOUT/2
RFOUT/4
Min.
+7
+8
-9
Vtune
Icc(Dig) + Icc(Amp) + Icc(RF)
2
290
1/2
3/2
2nd
3rd
Typ.
12.5 - 13.9
6.25 - 6.95
-110
330
2
28
34
29
40
3
20
1.5
Max.
+14
+14
-3
12
380
10
Units
GHz
GHz
dBm
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]









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HMC584LP5E Даташит, Описание, Даташиты
HMC584LP5 / 584LP5E
v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 12.5 - 13.9 GHz
Frequency vs. Tuning Voltage, Vcc = +5V
15.2
14.4
13.6
12.8
12
11.2
+25C
+85C
-40C
10.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Sensitivity vs. Tuning Voltage, Vcc = +5V
800
700
600 +25C
+85C
500 -40C
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise vs. Tuning Voltage
-70
-80
-90
-100
-110
10kHz OFFSET
100kHz OFFSET
-120
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Frequency vs. Tuning Voltage, T= 25°C
15.2
14.4
13.6
12.8
12
11.2
4.75V
5.00V
5.25V
10.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Output Power
vs. Tuning Voltage, Vcc = +5V
16
14
12
10
8
6 +25C
+85C
4 -40C
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
SSB Phase Noise @ Vtune = +5V
0
-20
-40
-60
-80
-100
+25C
+85C
-40C
-120
-140
-160
-180
103
104 105 106
OFFSET FREQUENCY (Hz)
107
8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2









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HMC584LP5E Даташит, Описание, Даташиты
HMC584LP5 / 584LP5E
v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 12.5 - 13.9 GHz
RFOUT/2 Frequency
vs. Tuning Voltage, Vcc = +5V
7.4
7.2
7
6.8
6.6
6.4
6.2
6
+25C
5.8 +85C
5.6 -40C
5.4
5.2
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-4 Frequency
vs. Tuning Voltage, Vcc = +5V
8
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3
2.9 +25C
+85C
2.8 -40C
2.7
2.6
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
RFOUT/2 Output Power
vs. Tuning Voltage, Vcc = +5V
16
14
12
10
8
6 +25C
+85C
4 -40C
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Divide-by-4 Output Power
vs. Tuning Voltage, Vcc = +5V
0
-2
+25C
+85C
-40C
-4
-6
-8
-10
0 1 2 3 4 5 6 7 8 9 10 11 12 13
TUNING VOLTAGE (VOLTS)
Absolute Maximum Ratings
Vcc(Dig), Vcc(Amp), Vcc(RF)
Vtune
Junction Temperature
Continuous Pdiss (T=85 °C)
(derate 43.5 mW/C above 85 °C
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
0 to +15V
135 °C
2.17 W
23 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Typical Supply Current vs. Vcc
Vcc (V)
Icc (mA)
4.75
300
5.00
330
5.25
360
Note: VCO will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]










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Номер в каталогеОписаниеПроизводители
HMC584LP5GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOHittite Microwave
Hittite Microwave
HMC584LP5EGaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOHittite Microwave
Hittite Microwave

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