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PDF HBR10150CT Data sheet ( Hoja de datos )
| Número de pieza | HBR10150CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
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Schottky Barrier Rectifier
FEATURES
·Common Cathode Structure
·Low Power Loss/High Efficiency
·High Operating Junction Temperature
·Guarding for Overvoltage protection，High reliability
·100% avalanche tested
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
HBR10150CT
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current (Per Leg)
(Total)
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed on
rated load conditions
150
5
10
80
V
A
A
TJ Junction Temperature
175 ℃
Tstg Storage Temperature Range
-40~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HBR10150CT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HBR10150CT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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