HBR15100 PDF даташит
Спецификация HBR15100 изготовлена «Inchange Semiconductor» и имеет функцию, называемую «Schottky Barrier Rectifier ( Diode )». |
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Детали детали
Номер произв | HBR15100 |
Описание | Schottky Barrier Rectifier ( Diode ) |
Производители | Inchange Semiconductor |
логотип |
2 Pages
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Schottky Barrier Rectifier
FEATURES
·Common Cathode Structure
·Low Power Loss/High Efficiency
·High Operating Junction Temperature
·Guarding for Overvoltage protection,High reliability
·100% avalanche tested
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
HBR15100
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current (Per Leg)
(Total)
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed on
rated load conditions
100
7.5
15
180
V
A
A
TJ Junction Temperature
175 ℃
Tstg Storage Temperature Range
-40~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
No Preview Available ! |
Schottky Barrier Rectifier
INCHANGE Semiconductor
HBR15100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.9
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IF= 7.5A ; Tj= 25℃
VF Maximum Instantaneous Forward Voltage IF=7.5A ; Tj= 125℃
IF= 10A ; Tj= 25℃
IF= 10A ; Tj= 125℃
VR= VRWM;Tj= 25℃
IR Maximum Instantaneous Reverse Current
VR= VRWM;Tj= 125℃
MAX
0.82
0.68
0.85
0.7
10
5
UNIT
V
uA
mA
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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Номер в каталоге | Описание | Производители |
HBR15100 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |