|
|
PDF NJVMJD122 Data sheet ( Hoja de datos )
| Número de pieza | NJVMJD122 | |
| Descripción | Complementary Darlington Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NJVMJD122 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYWW
J12xG
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 15
1
Publication Order Number:
MJD122/D
1 page  
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
NPN MJD122
+ 5
+ 4 *IC/IB ≤ hFE/3
+ 3
+ 2
+ 1
0 25°C to 150°C
- 1 qVC for VCE(sat)
- 2 - 55°C to 25°C
- 3 qVB for VBE 25°C to 150°C
- 4
- 55°C to 25°C
- 5
0.1
0.2 0.3 0.5 1 2 3
IC, COLLECTOR CURRENT (AMP)
57
10
+ 5
+ 4 *IC/IB ≤ hFE/3
+ 3 25°C to 150°C
+ 2 - 55°C to 25°C
+ 1
0
- 1 *qVC for VCE(sat)
- 2
- 3
qVB for VBE
- 4
25°C to 150°C
- 55°C to 25°C
- 5
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
57
10
Figure 5. Temperature Coefficients
105
REVERSE
104
FORWARD
103 VCE = 30 V
105
REVERSE
104
FORWARD
103 VCE = 30 V
102
TJ = 150°C
101
102
TJ = 150°C
101
100°C
100 25°C
10-1
+ 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
- 1.2 - 1.4
100 100°C
25°C
10-1
- 0.6 - 0.4 - 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 6. Collector Cut−Off Region
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
PNP
NPN
2
5 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. Small−Signal Current Gain
300
TJ = 25°C
200
100
70
50
30
0.1 0.2
Cob
Cib
PNP
NPN
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
www.onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NJVMJD122.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NJVMJD122 | Complementary Darlington Power Transistor | ON Semiconductor |
| NJVMJD127 | Complementary Darlington Power Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |