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Спецификация NOA1213 изготовлена «ON Semiconductor» и имеет функцию, называемую «Ambient Light Sensor». |
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Детали детали
Номер произв | NOA1213 |
Описание | Ambient Light Sensor |
Производители | ON Semiconductor |
логотип |
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NOA1213
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Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1213 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is less than 8 mA at dark and its quiescent
current consumption is less than 200 pA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1213 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
Features
• Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
• Photopic Spectral Response
• Dynamic Dark Current Compensation
• Three Selectable Output Current Gain Modes in Approximately 10x
Steps
• Power Down Mode
• Less than 14 mA at 100 lux Active Power Consumption in Medium
Gain Mode (Less than 8 mA at Dark)
• Less than 200 pA Quiescent Power Dissipation in Power Down
Mode at All Light Levels
• Linear Response Over the Full Operating Range
• Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
• Wide Operating Voltage Range (2 V to 5.5 V)
• Wide Operating Temperature Range (−40°C to 85°C)
• Drop−in Replacement Device in 1.6 x 1.6 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Applications
• Saves display power in applications such as:
♦ Cell Phones, PDAs, MP3 players, GPS
♦ Cameras, Video Recorders
♦ Mobile Devices with Displays or Backlit Keypads
♦ Laptops, Notebooks, Digital Signage
♦ LCD TVs and Monitors, Digital Picture Frames
♦ Automobile Dashboard Displays and Infotainment
♦ LED Indoor/Outdoor Residential and Street Lights
hn
IC1
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1
CUDFN6
CU SUFFIX
CASE 505AL
PIN ASSIGNMENT
VDD 1
6 IOUT
VSS 2
5 NC
GB1 3
4 GB2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NOA1213CUTAG* CUDFN6
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Temperature Range: −40°C to 85°C.
Vin = 2 to 5.5V
GS2 GS1
VDD GB2 GB1
Photo Amp
Diode
IOUT
VSS
NOA1212
C1
1μ
RL CL
ADC
IC2
Figure 1. Typical Application Circuit
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. P1
1
Publication Order Number:
NOA1213/D
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hn
Photo
Diode
NOA1213
GS2 GS1
GB2 GB1
Amp
IOUT
Reference
Diode
VOUT
RL
Figure 2. Simplified Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin Pin Name
Description
1
VDD
Power pin.
2
VSS
Ground pin.
3
GB1
In conjunction with GB2, selects between three gain modes and power down.
4
GB2
In conjunction with GB1, selects between three gain modes and power down.
5 NC Not connected. This may be connected to ground or left floating.
6
IOUT
Analog current output.
EP
VSS
Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input power supply
Input voltage range
Output voltage range
Output current range
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Charged Device Model (Note 1)
ESD Capability, Machine Model (Note 1)
Moisture Sensitivity Level
VDD
VIN
VOUT
Io
TJ(max)
TSTG
ESDHBM
ESDCDM
ESDMM
MSL
6
−0.3 to VDD + 0.3
−0.3 to VDD + 0.2
0 to 15
−40 to 85
−40 to 85
2
750
150
3
V
V
V
mA
°C
°C
kV
V
V
−
Lead Temperature Soldering (Note 2)
TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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NOA1213
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C)
Rating
Test Conditions
Symbol
Min
Typ
Max Unit
Power supply voltage
VDD
2
3.0 5.5 V
Power supply current
VDD = 3.0 V, Ev = 0 lux, H−Gain
IDD_0
6
8 12 mA
Power supply current
VDD = 3.0 V, Ev = 100 lux, H−Gain
IDD_100
35
45
55 mA
Power down current
All light levels
IDD_PD
0.2 5 nA
Output current, high−gain
Ev = 100 lux, White LED
Io_high
23.8
34
44.3 mA
Dark output current, high−gain
VDD = 3.0 V, Ev = 0 lux
Io_dark
10
nA
Wavelength of maximum
response
lm 590 nm
White LED/fluorescent current
ratio
Ev = 100 lux
rLE 1.0
Incandescent/fluorescent
current ratio
Ev = 100 lux
rIF 0.83
Maximum output voltage
Power down time
Wake up time
Low level input voltage
High level input voltage
Operating free−air temperature
range
Ev = 100 lux, RL = 220 kW, H−Gain
Ev = 100 lux, H−Gain to PD
Ev = 100 lux, PD to H−Gain
VOMAX
tPD
twu
VIL
VIH
TA
VDD–0.4
1.5
−0.2
0.75 VDD
−40
VDD–0.1
VDD
300
0.25 VDD
VDD+0.2
85
V
ms
ms
V
V
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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