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CHA3660-QQG PDF даташит

Спецификация CHA3660-QQG изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «21-27.5GHz Medium Power Amplifier».

Детали детали

Номер произв CHA3660-QQG
Описание 21-27.5GHz Medium Power Amplifier
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA3660-QQG Даташит, Описание, Даташиты
CHA3660-QQG
21-27.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3660-QQG is a 3 stage monolithic
medium power amplifier, which produces
25dB gain for 19dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UMS
A3660
YYWW
Main Features
Broadband performances: 21-27.5GHz
19dBm Pout at 1dB compression
25dB gain
30dBm OTOI
DC bias: Vd= 4.0V, Id= 180mA
16L-QFN4x4 (QQG)
MSL1
Output Power & PAE versus Frequency
30
28
26
24
22
20
18
16
14
Psat
P-1dB
PAE sat
12
10
17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
28
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P-1dB Output Power @1dB comp.
OTOI 3rd order Intercept point
Min Typ Max Unit
21.0
27.5 GHz
25 dB
19 dBm
30 dBm
Ref. : DSCHA3660-QQG5357 - 23 Dec 15
1/16 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









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CHA3660-QQG Даташит, Описание, Даташиты
CHA3660-QQG
21-27.5GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V
Symbol
Parameter
Min Typ
Max Unit
Freq Frequency range
21.0
27.5 GHz
Gain
ΔG
Linear Gain in 21- 24GHz
Linear Gain in 24.25- 27.5GHz
Gain variation in temperature
25
22
0.025
dB
dB/°C
GCTRL
OTOI
Gain control range
3rd order Intercept point in 21-24GHz
3rd order Intercept point in 24.25-27.5GHz
15
30
32
dB
dBm
P-1dB
Output power @ 1dB in 21-24GHz
Output power @ 1dB in 24.25-27.5GHz
19
18
dBm
Psat
Saturated Output Power in 21-24GHz
Saturated Output Power in 24.25-27.5GHz
21.5
20
dBm
RLin
Input Return Loss in 21- 24GHz
Input Return Loss in 24.25- 27.5GHz
15 dB
13
RLout
Output Return Loss in 21- 24GHz
Output Return Loss in 24.25- 27.5GHz
20
12
dB
NF Noise figure
4 dB
Id Quiescent Drain current
180 mA
Vg Gate voltage (Vg12 & Vg3)
-0.4 V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Ref. :DSCHA3660-QQG5357 - 23 Dec 15
2/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA3660-QQG Даташит, Описание, Даташиты
21-27.5GHz Medium Power Amplifier
CHA3660-QQG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4.5V
V
Id Drain bias quiescent current
260 mA
Vg Gate bias voltage
-2 to +0.4
V
Pin Maximum input power
Tj Junction temperature (2)
4 dBm
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Thermal Resistance channel to ground paddle =92°C/W for Tamb. = +85°C with 4.0V &
180mA.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
VG12
16
VG3
14
VD12
6
VD3 7
Parameter
DC Gate voltage 1st stage & 2nd stage
DC Gate voltage 3rd stage
DC Drain voltage 1st stage & 2nd stage
DC Drain voltage 3rd stage
Values
-0.4
-0.4
4.0
4.0
Unit
V
V
V
V
Ref. DSCHA3660-QQG5357 - 23 Dec 15
3/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34










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Номер в каталогеОписаниеПроизводители
CHA3660-QQG21-27.5GHz Medium Power AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors

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