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CHA3667aQDG PDF даташит

Спецификация CHA3667aQDG изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «7-20GHz Medium Power Amplifier».

Детали детали

Номер произв CHA3667aQDG
Описание 7-20GHz Medium Power Amplifier
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA3667aQDG Даташит, Описание, Даташиты
CHA3667aQDG
RoHS COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3667aQDG is a wide band
monolithic medium power amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems.
The circuit is manufactured with a Power-
pHEMT process, 0.15µm gate length, via
hole through the substrate.
It is ESD protected on RF ports thanks to
DC specific filter circuits.
It is available in lead-free SMD package.
Main Features
Broadband performance 7-20GHz
Self-biased
23dB gain @ 2.7dB noise figure
20dBm Output power @1dBcp
DC power consumption, 175mA @ 4.2V
24L-QFN4X4 SMD package
MSL1
UMS
A3667A
YYWW
RFin
Vd
RFout
Main Characteristics
Tamb = +25°C, Vd= 4.2V
Symbol
Parameter
Min Typ Max
Fop Input frequency range
7 20
G Small signal gain
21 23
NF Noise Figure
2.7 3.5
P-1dB Output power at 1dB gain compression
18.5 20
Id Bias current
130 175 220
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dB
dBm
mA
Ref. : DSCHA3667aQDG0158 - 07 Jun 10
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09









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CHA3667aQDG Даташит, Описание, Даташиты
CHA3667aQDG
7-20GHz Amplifier
Electrical Characteristics
Tamb = +25°C, Vd= 4.2V
Symbol
Parameter
Fop Operating frequency range
G Gain
(7-8GHz)
(8-19GHz)
(19-20GHz)
NF Noise figure (7-18GHz)
RLin Input Return Loss
(7-19.5GHz)
(19.5-20GHz)
RLout Output Return Loss
OIP3 Output IP3
P1dB Pout at 1dB gain compression
(7-13GHz)
(13-20GHz)
Isol Reverse isolation
Vd Drain bias voltage
Id Drain bias current
Min Typ Max Unit
7 20 GHz
19 20
dB
21 23
dB
19 20
dB
2.7 3.5 dB
-10 -8 dB
-8 -6 dB
-10 -8 dB
28 dBm
20 dBm
21 dBm
40 dB
4.2 V
130 175 220 mA
These values are representative of on board measurements as defined on the drawing in
paragraph “Evaluation board”.
Ref. : DSCHA3667aQDG0158 - 07 Jun 10
2/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09









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CHA3667aQDG Даташит, Описание, Даташиты
7-20GHz Amplifier
CHA3667aQDG
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4.5V
V
Id Power supply quiescent current
240 mA
Pin RF input power (2)
3 dBm
Top Operating temperature range
-40 to +85
°C
Tj Junction temperature (3)
175 °C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration<1s
Ref.: DSCHA3667aQDG0158 - 07 Jun 10
3/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09










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Номер в каталогеОписаниеПроизводители
CHA3667aQDG7-20GHz Medium Power AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors

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