CHA8012-99F PDF даташит
Спецификация CHA8012-99F изготовлена «United Monolithic Semiconductors» и имеет функцию, называемую «C Band High Power Amplifier». |
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Детали детали
Номер произв | CHA8012-99F |
Описание | C Band High Power Amplifier |
Производители | United Monolithic Semiconductors |
логотип |
8 Pages
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CHA8012-99F
C Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
CHA8012-99F is a monolithic two-stage
GaAs High Power Amplifier (HPA) designed
for C band applications. The HPA provides
typically 12W of output power on the 5.2 to
6.0GHz frequency band associated with 43%
of power added efficiency at 3dB gain
compression. The small signal gain is 22dB.
The overall power supply is of 8V/2.1A.
The circuit is dedicated to defense and space
applications and is also well suited for a wide
range of microwave and millimeter wave
applications and systems.
This device is manufactured using 0.25µm
Power pHEMT process, including via holes
through the substrate and air bridges. It is
available in chip form.
In
V+
STG1 STG2
V-
Main Features
■ Broadband performances: 5.2-6GHz
■ High output power: +41.5dBm
■ High PAE: 43%
■ Linear Gain: 22dB
■ DC bias: Vd=8Volt @Id=2.1A
■ Chip size 5.61x4.51x0.07mm
Out
Main Electrical Characteristics
Tamb.= +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)
Symbol
Parameter
Min Typ Max Unit
Freq
Frequency range
5.2 6.0 GHz
Gain
Linear Gain
22 dB
P_3dBcomp Output power @ 3dB compression
41.5 dBm
PAE_3dB
Power Added Efficiency @ 3dB comp.
43.0 %
Ref. : DSCHA80123332 - 28 Nov 13
1/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
No Preview Available ! |
CHA8012-99F
C Band High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +8V Idq=2.1A Pulsed mode (conditions: length=25µs Period=250µs)
Symbol
Parameter
Min Typ Max Unit
Freq
Frequency range
5.2 6.0 GHz
Gain
Linear Gain
22 dB
RLin
Input Return Loss
10 dB
RLout
Output Return Loss
10 dB
P_3dBcomp Output power @ 3dBcomp
41.5 dBm
PAE_3dB Power Added Efficiency @ 3dBcomp
43 %
Id_3dB
Supply drain current @ 3dBcomp
4.5 A
Vd1, Vd2 Drain supply voltage
8V
Id Supply quiescent current
2.1 A
Vg Gate supply voltage
-1.4 V
A bonding wire of typically 0.3nH on input and output RF port is recommended.
Ref.: DSCHA80123332 - 28 Nov 13
2/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
No Preview Available ! |
C Band High Power Amplifier
CHA8012-99F
Absolute Maximum Ratings (1)
Tamb= +25°C
Symbol
Parameter
Values
Vd Drain bias voltage
9.5V
Id Drain bias current
4
Vg Gate bias voltage
-5 to -0.6
Pin Maximum peak input power overdrive
+26
Tj Junction temperature
175
Ta Operating temperature range
-40 to +85
Tstg Storage temperature range
-55 to +155
(1) Operation of this device above anyone of these parameters may cause permanent
damage
Unit
V
A
V
dBm
°C
°C
°C
Typical Bias Conditions
Tamb= +25°C
Symbol
Pad No
Vd 7, 11, 15, 19
Vg 6, 20
Parameter
Drain Supply Voltage
Gate Supply Voltage
Values
8
-1.4
Unit
V
V
Ref.: DSCHA80123332 - 28 Nov 13
3/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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Номер в каталоге | Описание | Производители |
CHA8012-99F | C Band High Power Amplifier | United Monolithic Semiconductors |
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