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CHK8015-99F PDF даташит

Спецификация CHK8015-99F изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «16W Power Transistor».

Детали детали

Номер произв CHK8015-99F
Описание 16W Power Transistor
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHK8015-99F Даташит, Описание, Даташиты
CHK8015-99F
16W Power Transistor
GaN HEMT on SiC
Description
The CHK8015-99F is a 16W Gallium Nitride
High Electron Mobility Transistor. This product
offers a general purpose and broadband
solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate
length GaN HEMT technology on SiC
substrate.
It is proposed in a bare die form and requires
an external matching circuitry.
Main Features
Wide band capability up to 18GHz
Pulsed and CW operating modes
GaN technology: High Pout & High PAE
DC bias: VD=30V @ID_Q=200mA
Chip size 0.88x2x0.1mm
RoHS N°2011/65
REACh N°1907/2006
Main Electrical Characteristics
Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA
Symbol
Parameter
Min
GSS Small Signal Gain
PSAT
Saturated Output Power
PAE
Max Power Added Efficiency
GPAE_MAX Associated Gain at Max PAE
These values are deduced from elementary power cell performances
Typ
17
20
68
11
Max
Unit
dB
W
%
dB
Ref. : DSCHK80156315 - 10 Nov 16
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com









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CHK8015-99F Даташит, Описание, Даташиты
CHK8015-99F
16W Power Transistor
Recommended Operating Ratings
Tref = +25°C
Symbol
Parameter
Min Typ
VDS
VGS
VDG_peak
VGS_peak
ID_Q
Drain to Source Voltage
Gate to Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Quiescent Drain Current
-3.3
80
-20
0.2
ID_MAX
Drain Current
1
IG_MAX
Gate Current in forward
mode
Tj_MAX
Junction temperature
(1) Power dissipation must be considered
0
Max
30
0.46
(1)
16
200
Unit
V
V
V
V
A
A
mA
°C
Conditions
VDS=30V, ID_Q=200mA
DC+RF
DC+RF
VDS=30V
VDS=30V,
mode
Compressed
DC or
mode
(1)
Compressed
DC Characteristics
Tref = +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
VP Pinch-Off Voltage
-4 -3.4 -2.8
V VD=10V,ID= IDSS /100
ID_SAT
Saturated Drain Current
3.6
A (1), VD=10V, VG=1V
IG_leak
Gate Leakage Current
-0.8
mA VD=50V, VG=-7V
VBDG
Drain-Gate Break-down
Voltage
120
V VG=-7V, ID=20mA
RTH Thermal Resistance
6
°C/W
CW
Tref=75°C,(2)
mode,
(1) For information, limited by ID_MAX , see on ROR & AMR
(2) The thermal resistance is given for the power bar mounted on carrier plate (20µm Au/Sn
soldering + 1.4mm Cu/Mo/Cu). The reference temperature is defined on the carrier back
side. Thermal analysis is highly recommended, more details are available on request.
RF Characteristics
Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA
Symbol
Parameter
Min Typ Max
Unit
GSS
PSAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
17
20
68
GPAE_MAX Associated Gain at Max PAE
11
These values are deduced from elementary power cell performances
dB
W
%
dB
Conditions
Ref. : DSCHK80156315 - 10 Nov 16
2/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com









No Preview Available !

CHK8015-99F Даташит, Описание, Даташиты
16W Power Transistor
CHK8015-99F
Absolute Maximum Ratings
Tref = +25°C(1) (2) (3)
Symbol
Parameter
Rating
Unit Note
VDS_Q
VGS_Q
Drain-Source Biasing Voltage
Gate-Source Biasing Voltage
55
-10, +2
V
V
VDG_peak Drain-Gate Voltage (DC+RF)
120 V
VGS_peak Gate-Source Voltage (DC+RF) -25 V
IG_MAX
Maximum Gate Current
32 mA
IG_MIN
ID_MAX
PIN
Tj
Minimum Gate Current
Maximum Drain Current
Maximum Input Power
Maximum Junction Temperature
-2
See note
See note
230
mA
A
dBm
°C
(4)
(5)
TSTG
Storage Temperature
-55 to +150
°C
TCase
Case Operating Temperature
See note
°C
(4)
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) Max junction temperature must be considered
(5) Linked to and limited by Ig_max & Ig_min values. Maximum input power depends on
frequency and should not exceed 2dB above PAE_max.
Ref. : DSCHK80156315 - 10 Nov 16
3/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com










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Номер в каталогеОписаниеПроизводители
CHK8015-99F16W Power TransistorUnited Monolithic Semiconductors
United Monolithic Semiconductors

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