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CHV1206-98F PDF даташит

Спецификация CHV1206-98F изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «Low Phase Noise C band HBT VCO».

Детали детали

Номер произв CHV1206-98F
Описание Low Phase Noise C band HBT VCO
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHV1206-98F Даташит, Описание, Даташиты
CHV1206-98F
Low Phase Noise C band HBT VCO
GaAs Monolithic Microwave IC
Description
The CHV1206-98F is a low phase noise C band
HBT voltage controlled oscillator that integrates
negative resistor, varactors and buffer amplifiers. It
provides an excellent phase noise of 100dBc/Hz at
100kHz offset.
It is designed for a wide range of applications, from
space to commercial communication systems.
The circuit is fully integrated on InGaP HBT
process: 2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
VT
Vc
RF out
Main Features
C-band VCO + C buffers
Fully integrated VCO
(no need for external resonator)
Low phase noise
High frequency stability
On chip self-biased devices
Available in bare die
Chip size: 2.77x2.77mm²
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
0
2468
Vtune (Volts)
10
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_out Output frequency range on RF_out port
P_out Output power on RF_out port
PN_100 SSB Phase Noise @ F_out @ 100KHz offset
Min Typ Max Unit
5.35
6.1 GHz
8.5 dBm
100 dBc/Hz
Ref. : DSCHV12066212 -July the 29th, 2016
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com









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CHV1206-98F Даташит, Описание, Даташиты
CHV1206-98F
Low Phase Noise C band HBT VCO
Electrical Characteristics
Tamb.= +25°C, Vd = +3V
Symbol
Parameter
F_out Output frequency range
V_Tune Voltage Tuning range
Tuning sensitivity
Frequency drift rate
H1 Harmonics ½ F_out rejection
H3 Harmonics 3/2 F_out rejection
H4 Harmonics 2 F_out rejection
PN_10 SSB Phase Noise given @ F_out @ 10 kHz
PN_100 SSB Phase Noise given @ F_out @ 100 kHz
Output (RF_Out) Return loss
Pulling into 2:1 VSWR for all phases
Pushing vs Vc
P_out Output Power on RF_out port
Output power variation vs Tuning Voltage
Vc Positive supply voltage
I_Vc Positive supply current
Min
5.35
0
110
Typ
0.9
58
56
28
-78
-100
12
0.3
13
8.5
1.2
3
75
Max
6.1
10
275
3.5
Unit
GHz
V
MHz/V
MHz/°C
dBc
dBc
dBc
dBc/Hz
dBc/Hz
dB
MHz
MHz/V
dBm
dB
V
mA
These values are representative of measurements on board that are made with bonding
wires at the RF port.
A bonding wire of typically 0.3nH will improve the matching at the accesses.
Ref. : DSCHV12066212 -July the 29th, 2016
2/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com









No Preview Available !

CHV1206-98F Даташит, Описание, Даташиты
Low Phase Noise C band HBT VCO
CHV1206-98F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VT Tuning voltage
15 V
Vd Drain bias voltage
4V
Id Drain bias current
110 mA
Tj Junction temperature
175 °C
Ta Operating temperature range
-55 to +125
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
Vc VC
VT VT
Parameter
Positive voltage supply
Tuning Voltage
Values
3
0 to 10
Unit
V
V
Ref. : DSCHV12066212 -July the 29th, 2016
3/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com










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Номер в каталогеОписаниеПроизводители
CHV1206-98FLow Phase Noise C band HBT VCOUnited Monolithic Semiconductors
United Monolithic Semiconductors

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