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Datasheet CHZ015A-QEG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CHZ015A-QEG | 15W L-Band Driver CHZ015A-QEG
15W L-Band Driver
GaN HEMT on Sic in SMD leadless package
Description
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed rad |  United Monolithic Semiconductors | driver |
CHZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CHZ015A-QEG | 15W L-Band Driver CHZ015A-QEG
15W L-Band Driver
GaN HEMT on Sic in SMD leadless package
Description
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed rad United Monolithic Semiconductors driver | | |
| 2 | CHZ050A-SEA | GaN HEMT on SiC CHZ050A-SEA
50W C Band HPA
GaN HEMT on SiC
Description
The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal United Monolithic Semiconductors data | | |
| 3 | CHZ180A-SEB | 180W L-Band HPA CHZ180A-SEB
180W L-Band HPA
GaN HEMT on SiC in SEB Package
Description
The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed United Monolithic Semiconductors data | |
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