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HFP15N06 PDF даташит

Спецификация HFP15N06 изготовлена ​​​​«HUASHAN ELECTRONIC» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв HFP15N06
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители HUASHAN ELECTRONIC
логотип HUASHAN ELECTRONIC логотип 

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HFP15N06 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HFP15N06
N-Channel Enhancement Mode Field Effect Transistor
Applications
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
Features
15A, 60V(See Note), RDS(on) <100mV@VGS = 5V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Exceptional dv/dt capability
TO-220
1- G 2-D 3-S
Maximum RatingsTa=25unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------60V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±15V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 15A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 60A
PD —— Maximum Power Dissipation (Tc=25℃)-------------------------------------------------------- 60W
EAS—— Pulsed Avalanche Energy (Note 2) ------------------------------------------------------------- 50mJ
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 4.38
Max 58
Unit
/W
/W









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HFP15N06 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HFP15N06
Electrical CharacteristicsTa=25unless otherwise specified)
Symbol
Items
Min. Typ.
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate – Body Leakage
On Characteristics
60
VGS(th) Gate Threshold Voltage
1.0 1.75
RDS(on) Static Drain-Source On-Resistance
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
700
Coss Output Capacitance
230
Crss Reverse Transfer Capacitance
80
td(on) Turn - On Delay Time
15
tr Rise Time
160
td(off) Turn - Off Delay Time
52
tf Fall Time
100
Qg Total Gate Charge
18
Qgs Gate–Source Charge
8
Qgd Gate–Drain Charge
9
Drain-Source Diode Characteristics and Maximun Ratings
IS
Continuous Source–Drain Diode
Forward Current
ISM
Pulsed Drain-Source Diode
Forward Current
VSD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
250
±100
V
μA
nA
ID=250μA ,VGS=0V
VDS =60V, VGS=0V
VGS= ±15V , VDS =0V
2.5 V VDS = VGS , ID=250μA
100 mVGS=5V, ID=7.5A (Note 3)
950 pF
310
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
110 pF
60 nS
200
nS
VDS = 30V, VGS = 5V,
ID=7.5A,RG= 4.7
80 nS (Note 3)
140 nS
30 nC
nC
VDS=40V, ID=15A,
VGS = 5V (Note 3)
nC
15 A
60 A
1.5 V IS=15A,VGS=0(Note 3)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS conditionTj=25,VDD=25V,ID=15A,L=0.5mH
3. Pulse Test: Pulse width300μS, Duty Cycle1.5%









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HFP15N06 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP15N06










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Номер в каталогеОписаниеПроизводители
HFP15N06N-Channel Enhancement Mode Field Effect TransistorHUASHAN ELECTRONIC
HUASHAN ELECTRONIC

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