HGH20N120A PDF даташит
Спецификация HGH20N120A изготовлена «HUASHAN ELECTRONIC» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | HGH20N120A |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | HUASHAN ELECTRONIC |
логотип |
5 Pages
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汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Applications
• Induction heating and Microwave oven
• Soft switching applications
█ Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
█ Absolute Maximum Ratings
1―Gate,G
2―Collector,C
3―Emitter,E
Symbol
VCES
VGES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
1200
±30
Units
V
V
Collector Current(TC = 25℃)
IC
Collector Current(TC = 100℃)
40
20
A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current
(TC = 100℃)
15
A
Maximum Power Dissipation(TC =
PD
25℃)
Maximum Power Dissipation(TC =
100℃)
200
80
W
W
TJ
Operating Junction
Temperature
-55~+150 ℃
Tstg Storage Temperature Range -55~+150 ℃
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5
seconds
300
℃
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
█ Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40 ℃/W
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汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Electrical Characteristics of the IGBT(Tc=25℃,unless otherwise noted)
Symbol
Parameter
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter
Breakdown Voltage
Collector Cut-Off
Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer
Capacitance
Switching Characteristics
Test Conditions
VGE = 0V, IC = 250μA
VCE = 1200V, VGE = 0V
VGE = ±30V, VCE = 0V
IC = 250μA, VCE = VGE
IC = 20A, VGE = 15V;
TC = 25℃
VCE = 25V, VGE = 0V,
f= 100KHz
Min. Typ.
1200
3.0
2.3
840
130
50
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 20A,
RG = 28Ω, VGE = 15V,
Inductive Load, TC = 25℃
VCE = 600V, IC = 20A,
VGE = 15V
40
70
80
350
0.9
2.2
3.1
186
15
79
Max. Units
V
250
±250
μA
nA
6.5 V
2.7 V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
230 nC
20 nC
110 nC
█ Electrical Characteristics of the Diode (TC = 25℃ unless otherwise noted)
Symbol
VFM
trr
Irr
Qrr
Parameter
Test Conditions
Diode Forward Voltage
IF = 15A
Diode Reverse Recovery Time
Diode peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
IES =15A,
dI/dt =200A/μs
Min. Typ. Max. Units
1.7 2.7 V
210 330 ns
27 40
A
2.8 6.6 µC
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汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Typical Performance Characteristics
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Номер в каталоге | Описание | Производители |
HGH20N120A | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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