DataSheet26.com

HGH20N120A PDF даташит

Спецификация HGH20N120A изготовлена ​​​​«HUASHAN ELECTRONIC» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв HGH20N120A
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители HUASHAN ELECTRONIC
логотип HUASHAN ELECTRONIC логотип 

5 Pages
scroll

No Preview Available !

HGH20N120A Даташит, Описание, Даташиты
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
Applications
• Induction heating and Microwave oven
• Soft switching applications
Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
Absolute Maximum Ratings
1―Gate,G
2―Collector,C
3―Emitter,E
Symbol
VCES
VGES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
1200
±30
Units
V
V
Collector Current(TC = 25℃)
IC
Collector Current(TC = 100℃)
40
20
A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current
(TC = 100℃)
15
A
Maximum Power Dissipation(TC =
PD
25℃)
Maximum Power Dissipation(TC =
100℃)
200
80
W
W
TJ
Operating Junction
Temperature
-55~+150 ℃
Tstg Storage Temperature Range -55~+150 ℃
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5
seconds
300
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40 ℃/W









No Preview Available !

HGH20N120A Даташит, Описание, Даташиты
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
Electrical Characteristics of the IGBT(Tc=25℃,unless otherwise noted)
Symbol
Parameter
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter
Breakdown Voltage
Collector Cut-Off
Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer
Capacitance
Switching Characteristics
Test Conditions
VGE = 0V, IC = 250μA
VCE = 1200V, VGE = 0V
VGE = ±30V, VCE = 0V
IC = 250μA, VCE = VGE
IC = 20A, VGE = 15V;
TC = 25
VCE = 25V, VGE = 0V,
f= 100KHz
Min. Typ.
1200
3.0
2.3
840
130
50
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 20A,
RG = 28, VGE = 15V,
Inductive Load, TC = 25
VCE = 600V, IC = 20A,
VGE = 15V
40
70
80
350
0.9
2.2
3.1
186
15
79
Max. Units
V
250
±250
μA
nA
6.5 V
2.7 V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
230 nC
20 nC
110 nC
Electrical Characteristics of the Diode (TC = 25℃ unless otherwise noted)
Symbol
VFM
trr
Irr
Qrr
Parameter
Test Conditions
Diode Forward Voltage
IF = 15A
Diode Reverse Recovery Time
Diode peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
IES =15A,
dI/dt =200A/μs
Min. Typ. Max. Units
1.7 2.7 V
210 330 ns
27 40
A
2.8 6.6 µC









No Preview Available !

HGH20N120A Даташит, Описание, Даташиты
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
Typical Performance Characteristics










Скачать PDF:

[ HGH20N120A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HGH20N120AN-Channel Enhancement Mode Field Effect TransistorHUASHAN ELECTRONIC
HUASHAN ELECTRONIC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск