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S26KS512S PDF даташит

Спецификация S26KS512S изготовлена ​​​​«Cypress Semiconductor» и имеет функцию, называемую «high-speed CMOS MirrorBit NOR flash devices».

Детали детали

Номер произв S26KS512S
Описание high-speed CMOS MirrorBit NOR flash devices
Производители Cypress Semiconductor
логотип Cypress Semiconductor логотип 

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S26KS512S Даташит, Описание, Даташиты
S26KL512S / S26KS512S
S26KL256S / S26KS256S
S26KL128S / S26KS128S
512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte),
128 Mbit (16 Mbyte) 1.8V/3.0V
HyperFlash™ Family
Features
3.0V I/O, 11 bus signals
– Single ended clock
1.8V I/O, 12 bus signals
– Differential clock (CK, CK#)
Chip Select (CS#)
8-bit data bus (DQ[7:0])
Read-Write Data Strobe (RWDS)
– HyperFlash™ memories use RWDS only as a Read Data
Strobe
Up to 333 MB/s sustained read throughput
Double-Data Rate (DDR) – two data transfers per clock
166-MHz clock rate (333 MB/s) at 1.8V VCC
100-MHz clock rate (200 MB/s) at 3.0V VCC
96-ns initial random read access time
– Initial random access read latency: 5 to 16 clock cycles
Sequential burst transactions
Configurable Burst Characteristics
– Wrapped burst lengths:
– 16 bytes (8 clocks)
– 32 bytes (16 clocks)
– 64 bytes (32 clocks)
– Linear burst
– Hybrid option — one wrapped burst followed by linear burst
– Wrapped or linear burst type selected in each transaction
– Configurable output drive strength
Low Power Modes
– Active Clock Stop During Read: 12 mA, no wake-up
required
– Standby: 25 µA (typical), no wake-up required
– Deep Power-Down: 8 µA (typical)
– 300 µs wake-up required
INT# output to generate external interrupt
– Busy to Ready Transition
– ECC detection
RSTO# output to generate system level power-on reset
– User configurable RSTO# Low period
512-byte Program Buffer
Sector Erase
– Uniform 256-kB sectors
– Optional Eight 4-kB Parameter Sectors (32 kB total)
Advanced Sector Protection
– Volatile and non-volatile protection methods for each
sector
Separate 1024-byte one-time program array
Operating Temperature
– Industrial (–40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Extended (–40°C to +125°C)
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)
ISO/TS16949 and AEC Q100 Certified
Endurance
– 100,000 program/erase cycles
Retention
– 20 year data retention
Erase and Program Current
– Max Peak 100 mA
Packaging Options
– 24-Ball FBGA
Additional Features
– ECC 1-bit correction, 2-bit detection
– CRC (Check-value Calculation)
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-99198 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 25, 2016









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S26KS512S Даташит, Описание, Даташиты
S26KL512S / S26KS512S
S26KL256S / S26KS256S
S26KL128S / S26KS128S
Performance Summary
Read Access Timings
Maximum Clock Rate at 1.8V VCC/VCCQ
Maximum Clock Rate at 3.0V VCC/VCCQ
Maximum Access Time, (tACC)
Maximum CS# Access Time to First Word @ 166 MHz
166 MHz
100 MHz
96 ns
118 ns
Single Word Programming (2B = 16b)
Write Buffer Programming (512B = 4096b)
Sector Erase Time (256 kB = 2 Mb)
Typical Program / Erase Times
500 µs (~4 kB/s)
475 µs (~1 MB/s)
930 ms (~282 kB/s)
Burst Read (Continuous Read at 166 MHz)
Power-On Reset
Sector Erase Current
Write Buffer Programming Current
Standby (CS# = High)
Deep Power-Down (CS# = High, 85°C)
Typical Current Consumption
80 mA
80 mA
60 mA
60 mA
25 µA
30 µA (512 Mb)
4 µA (all other densities)
Document Number: 001-99198 Rev. *F
Page 2 of 98









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S26KS512S Даташит, Описание, Даташиты
S26KL512S / S26KS512S
S26KL256S / S26KS256S
S26KL128S / S26KS128S
Contents
1. General Description.................................................... 4
1.1 DDR Center Aligned Read Strobe
Functionality (DCARS).................................................. 6
1.2 Error Detection and Correction Functionality ................ 6
2. Connection Diagram................................................... 9
2.1 FBGA 24-Ball 5 x 5 Array Footprint .............................. 9
3. Signal Description .................................................... 10
4. HyperBus Protocol ................................................... 11
4.1 Command / Address Bit Assignments ........................ 12
4.2 Read Operations......................................................... 12
4.3 HyperFlash Read with DCARS Timing ....................... 16
4.4 Write Operations ......................................................... 17
5. Address Space Maps ................................................ 19
5.1 Flash Memory Array.................................................... 20
5.2 Device ID and CFI (ID-CFI) ASO ................................ 22
6. Embedded Operations.............................................. 24
6.1 Embedded Algorithm Controller (EAC) ....................... 24
6.2 Program and Erase Summary .................................... 25
6.3 Data Protection ........................................................... 49
7. Device ID and Common Flash Interface
(ID-CFI) ASO Map...................................................... 59
7.1 Device ID and Common Flash Interface
(ID-CFI) ASO Map — Standard .................................. 59
7.2 Device ID and Common Flash Interface
(ID-CFI) ASO Map — Automotive Grade
/ AEC-Q100 ................................................................ 64
8. Software Interface Reference .................................. 65
8.1 Command Summary ................................................... 65
9. Data Integrity ............................................................. 70
9.1 Endurance................................................................... 70
9.2 Data Retention ............................................................ 70
Hardware Interface
10. Electrical Specifications............................................ 71
10.1 Absolute Maximum Ratings ......................................... 71
10.2 Latchup Characteristics ............................................... 72
10.3 Operating Ranges........................................................ 72
10.4 DC Characteristics (CMOS Compatible)...................... 73
10.5 Power-Up and Power-Down ........................................ 75
10.6 Power-Off with Hardware Data Protection ................... 79
10.7 Power Conservation Modes......................................... 79
11. Timing Specifications................................................ 81
11.1 AC Test Conditions ...................................................... 81
11.2 AC Characteristics ....................................................... 82
11.3 Word Programming with Multiple Word
Burst Data Load........................................................... 87
12. Embedded Algorithm Performance.......................... 89
13. Ordering Information ................................................. 90
13.1 Ordering Part Numbers................................................ 90
13.2 Valid Combinations — Standard.................................. 91
13.3 Valid Combinations — Automotive Grade
/ AEC-Q100 ................................................................. 93
14. Physical Interface ...................................................... 95
14.1 Physical Diagram ......................................................... 95
15. Document History Page ............................................ 96
Sales, Solutions, and Legal Information ...........................98
Worldwide Sales and Design Support ........................... 98
Products ........................................................................ 98
PSoC® Solutions .......................................................... 98
Cypress Developer Community ..................................... 98
Technical Support ......................................................... 98
Document Number: 001-99198 Rev. *F
Page 3 of 98










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Номер в каталогеОписаниеПроизводители
S26KS512Shigh-speed CMOS MirrorBit NOR flash devicesCypress Semiconductor
Cypress Semiconductor

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