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CD3086 PDF даташит

Спецификация CD3086 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «General Purpose NPN Transistor Array».

Детали детали

Номер произв CD3086
Описание General Purpose NPN Transistor Array
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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CD3086 Даташит, Описание, Даташиты
CA3086
November 1996
General Purpose NPN
Transistor Array
Applications
Description
• Three Isolated Transistors and One Differentially
Connected Transistor Pair For Low-Power Applications
from DC to 120MHz
• General-Purpose Use in Signal Processing Systems
Operating in the DC to 190MHz Range
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the
CA3018 Integrated-Circuit Transistor Array” for
Suggested Applications
Ordering Information
The CA3086 consists of five general-purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially
connected pair.
The transistors of the CA3086 are well suited to a wide vari-
ety of applications in low-power systems at frequencies from
DC to 120MHz. They may be used as discrete transistors in
conventional circuits. However, they also provide the very
significant inherent advantages unique to integrated circuits,
such as compactness, ease of physical handling and ther-
mal matching
PART NUMBER
(BRAND)
CA3086
CA3086M
(3086)
CA3086M96
(3086)
CA3086F
TEMP.
RANGE (oC)
PACKAGE
-55 to 125 14 Ld PDIP
-55 to 125 14 Ld SOIC
-55 to 125
-55 to 125
14 Ld SOIC Tape
and Reel
14 Ld CERDIP
PKG.
NO.
E14.3
M14.15
M14.15
F14.3
Pinout
CA3086
(PDIP, CERDIP, SOIC)
TOP VIEW
1
2
Q1
3
Q2
4
5
6
7
14
Q5
13 SUBSTRATE
12
11
Q4
10
9
Q3
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-27
File Number 483.3









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CD3086 Даташит, Описание, Даташиты
CA3086
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, VCEO. . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, VEBO. . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . . 150
75
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any one transistor). . . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages) . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC)
ground. A suitable bypass capacitor can be used to establish a signal ground.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC, For Equipment Design
PARAMETER
SYMBOL TEST CONDITIONS MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current (Figure 1)
Collector-Cutoff Current (Figure 2)
DC Forward-Current Transfer Ratio (Figure 3)
V(BR)CBO
V(BR)CEO
V(BR)ClO
V(BR)EBO
ICBO
ICEO
hFE
lC = 10µA, IE = 0
IC = 1mA, IB = 0
IC = 10µA, ICI = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0,
VCE = 10V, IB = 0,
VCE = 3V, IC = 1mA
20 60
-
15 24
-
20 60
-
57 -
-
0.002
100
- (Figure 2) 5
40 100
-
V
V
V
V
nA
µA
Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance
PARAMETER
DC Forward-Current Transfer Ratio
(Figure 3)
Base-to-Emitter Voltage (Figure 4)
VBE Temperature Coefficient (Figure 5)
Collector-to-Emitter
Saturation Voltage
Noise Figure (Low Frequency)
SYMBOL
hFE
VBE
VBE/T
VCE SAT
TEST CONDITIONS
VCE = 3V
VCE = 3V
VCE = 3V, lC = 1 mA
IB = 1mA, IC = 10mA
IC = 10mA
IC = 10µA
IE = 1 mA
IE = 10mA
NF f = 1kHz, VCE = 3V, IC = 100µA,
RS = 1k
TYPICAL
VALUES
100
54
0.715
0.800
-1.9
0.23
3.25
UNITS
V
V
mV/oC
V
dB
5-28









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CD3086 Даташит, Описание, Даташиты
CA3086
Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
Low-Frequency, Small-Signal Equivalent-
Circuit Characteristics:
f = 1kHz,VCE = 3V, IC = 1mA
Forward Current-Transfer Ratio
(Figure 6)
hFE
100
Short-Circuit Input Impedance
(Figure 6)
hIE
3.5
Open-Circuit Output Impedance
(Figure 6)
Open-Circuit Reverse-Voltage
Transfer Ratio (Figure 6)
hOE
hRE
15.6
1.8 X 10-4
Admittance Characteristics:
Forward Transfer Admittance
(Figure 7)
f = 1MHz,VCE = 3V, lC = 1mA
yFE
31 - j1.5
Input Admittance (Figure 8)
Output Admittance (Figure 9)
Reverse Transfer Admittance
(Figure 10)
yIE
yOE
yRE
0.3 + j0.04
0.001 + j0.03
See Figure 10
Gain-Bandwidth Product (Figure 11)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
fT
CEBO
CCBO
CClO
VCE = 3V, IC = 3mA
VEB = 3V, IE = 0
VCB = 3V, IC = 0
VC l = 3V, IC = 0
550
0.6
0.58
2.8
Typical Performance Curves
UNITS
-
k
µS
-
mS
mS
mS
-
MHz
pF
pF
pF
102
IE = 0
10
1
10-1
VCB = 15V
VCB = 10V
VCB = 5V
10-2
10-3
10-4
0
25 50 75 100
TEMPERATURE (oC)
FIGURE 1. ICBO vs TEMPERATURE
125
103 IB = 0
102
10
1
VCE = 10V
VCE = 5V
10-1
10-2
10-3
0
25 50 75 100
TEMPERATURE (oC)
FIGURE 2. ICEO vs TEMPERATURE
125
5-29










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Номер в каталогеОписаниеПроизводители
CD3086General Purpose NPN Transistor ArrayIntersil Corporation
Intersil Corporation

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