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CE3524K3 PDF даташит

Спецификация CE3524K3 изготовлена ​​​​«CEL» и имеет функцию, называемую «24GHz Super Low Noise FET».

Детали детали

Номер произв CE3524K3
Описание 24GHz Super Low Noise FET
Производители CEL
логотип CEL логотип 

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CE3524K3 Даташит, Описание, Даташиты
PRELIMINARY DATASHEET
RF Low Noise FET
CE3524K3
24GHz SupEenrteLroawShNoortiDsoecFumETenitn/TiHtleoNllaomwe PHlearestic PKG
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.84dB TYP., Ga = 13.4dB TYP.
@VDS = 2V, ID = 10mA, f = 24GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3524K3
CE3524K3-C1
Package
Micro-X plastic
package
Marking
TBD
Description
Embossed tape 8 mm wide
Pin 4 (Gate) faces the
perforation side of the tape
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: October 2016
CDS-0036-01 (Issue A)
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CE3524K3 Даташит, Описание, Даташиты
PRELIMINARY DATASHEET
PIN CONFIGURATION AND
INTERNAL BLOCK DIAGRAM
Pin No.
1
2
3
4
Pin Name
Source
Drain
Source
Gate
CE3524K3
ABSOLUTE MAXIMUM RATINGS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Rating
Drain to Source Voltage
VDS 4.0
Gate to Source Voltage
VGS -3.0
Drain Current
ID IDSS
Gate Current
IG 80
Total Power Dissipation
Ptot 125
Channel Temperature
Tch +150
Storage Temperature
Tstg -55 to +125
Operation Temperature
Top -55 to +125Note
Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4
Unit
V
V
mA
µA
mW
°C
°C
°C
RECOMMENDED OPERATING RANGE
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
MIN.
Drain to Source Voltage
Drain Current
VDS TBD
ID TBD
TYP.
+2
10
MAX.
TBD
TBD
Unit
V
mA
This document is subject to change without notice.
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CE3524K3 Даташит, Описание, Даташиты
PRELIMINARY DATASHEET
CE3524K3
ELECTRICAL CHARACTERISTICS
(TA = +25˚C, unless otherwise specified)
Parameter
Symbol
Condition
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
IGSO
IDSS
VGS(off)
Gm
NF
Ga
VGS = -3.0V
VDS = 2V, VGS = 0V
VDS = 2V, ID = 100µA
VDS = 2V, ID = 10mA
VDS = 2V, ID = 10mA,
f = 24GHz
MIN.
TBD
TBD
TBD
TBD
TBD
TBD
TYP.
0.4
40
-0.75
62
0.84
13.4
MAX.
TBD
TBD
TBD
-
TBD
TBD
Unit
µA
mA
V
mS
dB
dB
This document is subject to change without notice.
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