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PDF WGA40G60 Data sheet ( Hoja de datos )
| Número de pieza | WGA40G60 | |
| Descripción | Low Loss IGBT | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Features
■ High current capability
■ low saturation voltage:(VCE(sat)=2.3@I C=40A)
■ High input impedance
■ Fast switching
■ RoHS compliant
Applications
■ Induction Heating
■ UPS
■ SMPS
■ PFC
WGA40G60
Low Loss IGBT
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
Value
VCES
IC
I CM(1)
VGES
PD
TJ
T STG
TL
Collector-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Gate-Emitter Voltage
Tc=25℃
Tc=100℃
Tc=25℃
Maximum Power Dissipation
Tc=25℃
Maximum Power Dissipation
Operation Junction Temperature
Tc=100℃
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,1/8 from case for 5
seconds
60 0
80
40
12 0
±20
29 0
11 6
-55~ 150
-55 ~ 150
30 0
Unit
V
A
A
A
V
W
W
℃
℃
℃
Thermal Characteristics
Symbol
Parameter
R QJC(IGBT) Therm al Resistance , Junction -to -Case
RQJC(Diode) Thermal Resistance, Junction-to-Case
RQJA Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.4 3
1.4 5
- - 40
Unit
℃/W
℃/W
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.
1 page  
WGA40G60
Fig.13Turn-off Characteristics vs.Gate Resistance Fig.14 Turn-on characteristics vs.Collector Current
Fig.15 Turn-off characteristics vs.Collector Current
Fig.16 Switching Loss vs. Gate Resistance
Fig.17 Switching Loss vs.Collector Current
Fig.18 Turn-off Switching SOA Characteristics
Steady, keep you advance
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WGA40G60.PDF ] | |
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