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WGP15G65 PDF даташит

Спецификация WGP15G65 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WGP15G65
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WGP15G65 Даташит, Описание, Даташиты
WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
VGE Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM(1)
Collector Current (pulsed)
Eas Single Pulse Energy TC= 25°C
PTOT
Total Dissipation at TC = 25°C
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
Thermal Characteristics
Symbol
RQJ C
RQJ A
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
40
30
15
45
500
150
3
- 55 to 150
Unit
V
A
A
A
mJ
W
KV
Value
Min Typ
--
--
Max
0.75
62.5
Unit
/W
/W
Electrical Characteristics (TCASE= 25 °C UNLESS OTHERWISE SPECIFIED)
Symbol
Parameter
Test Conditions
BV(CES)
BV(ECR)
ICES
IGES
VGE(th)
VCE(SAT)
Clamped Voltage
Emitter Collector Break-down Voltage
Collector cut-off Current (VGE =0)
Gate-Emitter Leakage Current (VCE =0)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
IC=1mA,VGE =0,TC=25°C
IC = 75 mA, TC= 25°C
VCE=620V, VGE=0 ,TC=25°C
VGE =±10V,VCE = 0
VCE =VGE, IC = 250μA, TC=- 50°C
VCE =VGE, IC = 250μA, TC= 25°C
VCE =VGE, IC = 250μA, TC=150°C
VGE =5.5V, IC = 5 A, TC= 25°C
VGE =5.5V, IC = 5A, TC= 150°C
VGE =5.5V, IC = 10 A, TC= 25°C
VGE =5.5V, IC = 10 A, TC= 150°C
Min
650
20
-
-
2
1.8
1.5
-
-
-
-
Typ
-
30
5
±100
3.18
3.05
2.11
1.03
0.92
1.5
1.32
Max
-
-
-
-
4
3.5
3
1.2
1.2
1.7
1.5
Unit
V
V
uA
uA
V
V
V
V
V
V
V
Symbol
gfs (1)
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Test Conditions
VCE =25V , IC=10 A
VCE=25V, f= 1MHz, VGE =0
VCE = 280V, IC =10 A, VGE=5V
Min.
25
-
-
-
-
Typ.
30
1196
211
3.3
21.4
Max.
-
-
-
-
-
Unit
S
pF
pF
pF
nC
Symbol
Parameter
Test Conditions
Min.
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
Typ. Max. Unit
WT-G003-Rev.A0 Nov.2013
WINSEMI MICROELECTRONICS
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WGP15G65 Даташит, Описание, Даташиты
WGP15G65 Product Description
tr(Voff)
td(off)
tf
Eoff (**)
tr(Voff)
td (off)
tf
Eoff (**)
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
VCC = 250V, IC =10 A, RGE =1K
Ω ,VGE = 5.5V
VCC = 250V, IC =10A, RGE =1K
Ω ,VGE = 5.5V ,Tj = 125 °C
- 1.84
3
µs
- 2.58
4
µs
- 3.32
5
µs
- 7.72 11 mJ
- 2.5 4 µs
-1
2 µs
- 4.54
6
µs
- 8.63 15 mJ
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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WGP15G65 Даташит, Описание, Даташиты
WGP15G65 Product Description
100
90
80
70
60
50
40
30
20
10
0
0
Vce @Vgs=2.0V
Vce @Vgs=3.0V
Vce @Vgs=4.0V
Vce @Vgs=5.0V
Vce @Vgs=6.0V
Vce @Vgs=7.0V
Vce @Vgs=8.0V
Vce @Vgs=10.0V
5 10 15 20 25
Vce(V)
Output Characteristics
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
-75
-25
25 75
VGE(th)
125
175
Normalized Gate Threshold Voltage
vs Temp.
35
Ic @Temp=-40.0C
Ic @Temp=25.0C
30 Ic @Temp=125.0C
25
20
15
10
5
0
01 2345 67
VGE(V)
Transfer Characteristics
2
1.8 Ciss (nF)
1.6 Coss (nF)
Crss (nF)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 10 20 30 40 50 60 70
VDS(V0
Capacitance Variations
9
8
7 VCE=280V,IC=10
6
5
4
3
2
1
0
0 5 10 15 20 25
Qg(nC)
Gate Charge vs Gate-Emitter Voltage
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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Номер в каталогеОписаниеПроизводители
WGP15G65Silicon N-Channel MOSFETWinsemi
Winsemi

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