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даташит NLU1G07 PDF ( Datasheet )

NLU1G07 Datasheet Download - ON Semiconductor

Номер произв NLU1G07
Описание Single Non-Inverting Buffer
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLU1G07 Даташит, Описание, Даташиты
NLU1G07
Single Non-Inverting Buffer
with Open Drain Output
The NLU1G07 MiniGatet is an advanced highspeed CMOS
noninverting buffer with open drain output in ultrasmall footprint.
The NLU1G07 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
UltraSmall Packages
These are PbFree Devices
NC 1
IN A 2
OVT
6 VCC
5 NC
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
MU SUFFIX
JM
CASE 517AA
1
UDFN6
1.0 x 1.0
CASE 517BX
XM
1
UDFN6
1.45 x 1.0
CASE 517AQ
XM
1
J = Device Marking
M = Date Code
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
IN A 1 OUT Y
Figure 2. Logic Symbol
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 NC
6 VCC
FUNCTION TABLE
AY
LL
HZ
© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 4
1
Publication Order Number:
NLU1G07/D







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NLU1G07 Даташит, Описание, Даташиты
NLU1G07
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
0.5 to +7.0
0.5 to +7.0
0.5 to +7.0
20
±20
±12.5
±25
±25
65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR
VESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 5)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22A114A.
3. Tested to EIA / JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN
VOUT
TA
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating FreeAir Temperature
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min Max Unit
1.65 5.5 V
0 5.5 V
0 5.5 V
55
+125
°C
0 100 ns/V
0 20
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NLU1G07 Даташит, Описание, Даташиты
NLU1G07
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
LowLevel Input
Voltage
Conditions
VIL LowLevel Input
Voltage
VOL
ILKG
IIN
IOFF
ICC
LowLevel
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
ZState Output
Leakage Current
Input Leakage
Current
Power off Input
Leakage Current
Quiescent Supply
Current
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = VIH, VOUT
= VCC or GND
0 = VIN = 5.5 V
0 v VIN,
VOUT = 5.5 V
0 v VIN v VCC
VCC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0.0
5.5
TA = 25 5C
Min Typ Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0 0.1
0 0.1
0 0.1
TA = +855C
Min Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
TA = 555C
to +1255C
Min Max
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
Unit
V
V
V
0.36
0.36
±0.25
0.44 0.52
0.44 0.52
±2.5 ±5.0 mA
±0.1 ±1.0 ±1.0 mA
0.25 2.5 5 mA
1.0 20 40 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
VCC TA = 25 5C
(V) Test Condition Min Typ Max
TA = +855C
Min Max
TA = 555C
to +1255C
Min Max
Unit
tPZL Output Enable
Time, Input A to
Output Y
3.0 to
3.6
RL = R1 = 50 W,
CL = 15 pF
RL = R1 = 50 W,
CL = 50 pF
5.0 7.1
7.5 10.6
8.5 10.0 ns
12.0 14.5
4.5 to
5.5
RL = R1 = 50 W,
CL = 15 pF
3.8 5.5
6.5 8.0
RL = R1 = 50 W,
CL = 50 pF
5.3 7.5
8.5 10.0
tPLZ Output Disable
Time
3.0 to
3.6
RL = R1 = 50 W,
CL = 50 pF
7.5 10.6
12.0 14.5 ns
4.5 to
5.5
RL = R1 = 50 W,
CL = 50 pF
5.3 7.5
8.5 10.0
CIN Input Capacitance
4 10
10 10.0 pF
CPD
Power Dissipation
Capacitance
5.0
(Note 6)
18
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained
dynamic power consumption: PD = CPD VCC2
by
fin
the equation
+ ICC VCC.
ICC(OPR)
=
CPD
VCC
fin
+
ICC.
CPD
is
used
to
determine
the
noload
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