DataSheet26.com

NLU1G14 PDF даташит

Спецификация NLU1G14 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Single Schmitt-Trigger Inverter».

Детали детали

Номер произв NLU1G14
Описание Single Schmitt-Trigger Inverter
Производители ON Semiconductor
логотип ON Semiconductor логотип 

7 Pages
scroll

No Preview Available !

NLU1G14 Даташит, Описание, Даташиты
NLU1G14
Single Schmitt-Trigger
Inverter
The NLU1G14 MiniGatet is an advanced highspeed CMOS
Schmitttrigger inverter in ultrasmall footprint.
The NLU1G14 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
The NLU1G14 can be used to enhance noise immunity or to square
up slowly changing waveforms.
Features
High Speed: tPD = 4.0 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
UltraSmall Packages
These are PbFree Devices
NC 1
6 VCC
IN A 2
5 NC
GND 3
4 OUT Y
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
MU SUFFIX
PM
CASE 517AA
1
UDFN6
1.0 x 1.0
CASE 517BX
QM
1
UDFN6
1.45 x 1.0
CASE 517AQ
LM
1
P = Device Marking
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. Pinout (Top View)
IN A 1 OUT Y
Figure 2. Logic Symbol
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 NC
6 VCC
FUNCTION TABLE
AY
LH
HL
© Semiconductor Components Industries, LLC, 2016
June, 2016 Rev. 4
1
Publication Order Number:
NLU1G14/D









No Preview Available !

NLU1G14 Даташит, Описание, Даташиты
NLU1G14
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
0.5 to +7.0
0.5 to +7.0
0.5 to +7.0
20
±20
±12.5
±25
±25
65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR
VESD
Flammability Rating Oxygen
ESD Withstand Voltage
Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 5)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22A114A.
3. Tested to EIA / JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN
VOUT
TA
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating FreeAir Temperature
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min Max Unit
1.65 5.5 V
0 5.5 V
0 5.5 V
55
+125
°C
0
No Limit
ns/V
0 No Limit
www.onsemi.com
2









No Preview Available !

NLU1G14 Даташит, Описание, Даташиты
NLU1G14
DC ELECTRICAL CHARACTERISTICS
Symbol
VT+
VT
VH
Parameter
Positive
Threshold
Voltage
Negative
Threshold
Voltage
Hysteresis
Voltage
VOH Minimum
HighLevel
Output
Voltage
VOL Maximum
LowLevel
Output
Voltage
IIN Input
Leakage
Current
ICC
Quiescent
Supply
Current
Conditions
VIN v VTMIN
IOH = 50 mA
VIN v VTMIN
IOH = 4 mA
IOH = 8 mA
VIN w VT+MAX
IOL = 50 mA
VIOINL =w4VmTA+MAX
IOL = 8 mA
0 v VIN v 5.5 V
VGINND= 5.5 V or
VCC
(V)
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
TA = 25 5C
Min Typ Max
1.85 2.0
2.2
2.86 3.0 3.15
3.50 3.6 3.85
0.9 1.5 1.65
1.35 2.3 2.46
1.65 2.9 3.05
0.30 0.57 1.20
0.40 0.67 1.40
0.50 0.74 1.60
1.9 2.0
2.9 3.0
4.4 4.5
2.58
3.94
0
0
0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
TA = +855C
Min Max
2.2
3.15
3.85
0.9
1.35
1.65
0.30 1.20
0.40 1.40
0.50 1.60
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
TA = 555C to
+1255C
Min Max
2.2
3.15
3.85
0.9
1.35
1.65
0.30 1.20
0.40 1.40
0.50 1.60
1.9
2.9
4.4
Unit
V
V
V
V
2.34
3.66
0.1
0.1
0.1
V
0.52
0.52
±1.0 mA
40 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
TA = 555C to
VCC Test
TA = 25 5C
TA = +855C
+1255C
(V) Condition Min Typ Max Min Max Min Max Unit
ttPPLHHL,
CIN
CPD
Propagation Delay,
Input A to Output Y
Input Capacitance
Power Dissipation
Capacitance (Note 6)
3.0 to
3.6
4.5 to
5.5
5.0
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
7.0 12.8 1.0 15.0 1.0 17.0 ns
8.5 16.3 1.0 18.5 1.0 20.5
4.0 8.6 1.0 10.0 1.0 11.5
5.5 10.6 1.0 12.0 1.0 13.5
5 10
10
10.0 pF
7.0 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained
dynamic power consumption: PD = CPD VCC2
by
fin
the equation
+ ICC VCC.
ICC(OPR)
=
CPD
VCC
fin
+
ICC.
CPD
is
used
to
determine
the
noload
www.onsemi.com
3










Скачать PDF:

[ NLU1G14.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NLU1G14Single Schmitt-Trigger InverterON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск