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даташит NLU2G07 PDF ( Datasheet )

NLU2G07 Datasheet Download - ON Semiconductor

Номер произв NLU2G07
Описание Dual Non-Inverting Buffer
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLU2G07 Даташит, Описание, Даташиты
NLU2G07
Dual Non-Inverting Buffer,
Open Drain
The NLU2G07 MiniGatet is an advanced high−speed CMOS dual
non−inverting buffer with open drain output in ultra−small footprint.
The NLU2G07 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
IN A1 1
GND 2
6 OUT Y1
5 VCC
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
1.0 x 1.0
CASE 517BX
XM
1
UDFN6
1.2 x 1.0
EM
CASE 517AA
1
UDFN6
1.45 x 1.0
CASE 517AQ
XM
1
E = Device Marking
M = Date Code
IN A2 3
4 OUT Y2
Figure 1. Pinout (Top View)
IN A1 1 OUT Y1
IN A2 1 OUT Y2
Figure 2. Logic Symbol
PIN ASSIGNMENT
1 IN A1
2 GND
3 IN A2
4 OUT Y2
5 VCC
6 OUT Y1
FUNCTION TABLE
AY
LL
HZ
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 5
1
Publication Order Number:
NLU2G07/D







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NLU2G07 Даташит, Описание, Даташиты
NLU2G07
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−20
±20
±12.5
±25
±25
−65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR Flammability Rating Oxygen
Index: 28 to 34
UL 94 V−0 @ 0.125 in
ILATCHUP Latchup Performance Above VCC and Below GND at 125 °C (Note 2)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN
VOUT
TA
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min Max Unit
1.65 5.5 V
0 5.5 V
0 5.5 V
−55
+125
°C
0 100 ns/V
0 20
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NLU2G07 Даташит, Описание, Даташиты
NLU2G07
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
VIL
VOL
ILKG
IIN
IOFF
ICC
Parameter
Low−Level
Input Voltage
Low−Level
Input Voltage
Low−Level
Output Voltage
Z−State
Output
Leakage
Current
Input Leakage
Current
Power Off
Input Leakage
Current
Quiescent
Supply Current
Conditions
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = VIH,
VOUT = VCC or
GND
0 v VIN v 5.5 V
0 v VIN,
VOUT v 5.5 V
0 v VIN v VCC
VCC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0
5.5
TA = 25 5C
Min Typ Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0 0.1
0 0.1
0 0.1
0.36
0.36
±0.25
±0.1
0.25
1.0
TA = +855C
Min Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
0.44
0.44
±2.5
±1.0
2.5
10
TA = −555C to
+1255C
Min Max
Unit
V
0.25 x
VCC
0.30 x
VCC
0.1
0.1
0.1
V
V
0.52
0.52
±5.0 mA
±1.0 mA
5.0 mA
40 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
Test
TA = 25 5C
(V)
Condition
Min Typ Max
TA = +855C
Min Max
TA = −555C
to +1255C
Min Max
Unit
tPZL Propagation Delay,
3.0 to 3.6 RL = R1 = 50 W
Input A to Output Y
CL = 15 pF
5.0 7.1
8.5 10 ns
RL = R1 = 50 W
CL = 50 pF
7.5 10.6
12 14.5
4.5 to 5.5
RL = R1 = 50 W
CL = 15 pF
3.8 5.5
6.5 8.0
RL = R1 = 50 W
CL = 50 pF
5.3 7.5
8.5 10
tPLZ Output Disable Time 3.0 to 3.6 RL = R1 = 50 W
CL = 50 pF
7.5 10.6
12 14.5 ns
4.5 to 55
RL = R1 = 50 W
CL = 50 pF
5.3 7.5
8.5 10
CIN Input Capacitance
CPD Power Dissipation
Capacitance (Note 3)
5.0
4.0 10
18
10 10 pF
pF
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
www.onsemi.com
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