C3D30065D PDF даташит
Спецификация C3D30065D изготовлена «Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | C3D30065D |
Описание | Silicon Carbide Schottky Diode |
Производители | Cree |
логотип |
6 Pages
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C3D30065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM = 650 V
IF (TC=135˚C) = 36 A**
Qc = 89 nC**
• 650 Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
TO-247-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Maximum Ratings (TC=25°C unless otherwise specified)
Part Number
C3D30065D
Package
TO-247-3
Marking
C3D30065
Symbol
Parameter
Value
Test Conditions
Note
VRRM Repetitive Peak Reverse Voltage
650 V
VRSM Surge Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
IF
Continuous Forward Current
(Per Leg/Device)
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation(Per Leg/Device)
Diode dV/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
650 V
39/78
18/36
15/30
66*
46*
162
150
1400
1200
150
65
200
131*
112.5*
-55 to +175
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=145˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-600V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D30065D Rev. -, 09-2016
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Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.45
2.0
18.5
38.5
44.5
877.5
80
64
1.8
2.4
95
378
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 16 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
6.2
μJ VR = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1*
0.5**
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance (Per Leg)
45
40 TJ = -55 °C
35 TJ = 25 °C
30 TJ = 75 °C
25 TJ = 125 °C
20 TJ = 175 °C
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward VVoFl(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900
ReverseVVRo(ltVag)e, VR (V)
Figure 2. Reverse Characteristics
2 C3D30065D Rev. -, 09-2016
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Typical Performance (Per Leg)
140
120
100
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
40
20
0
25 50 75 100 125 150 175
TC ˚C
Figure 3. Current Derating
70
Conditions:
60 TJ = 25 °C
50
40
30
20
10
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC ˚C
1000
900
800
700
600
500
400
300
200
100
0
0
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1 10 100
ReversVe VRo(ltVag)e, VR (V)
1000
Figure 6. Capacitance vs. Reverse Voltage
3 C3D30065D Rev. -, 09-2016
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C3D30065D | Silicon Carbide Schottky Diode | Cree |
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