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C3D30065D PDF даташит

Спецификация C3D30065D изготовлена ​​​​«Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode».

Детали детали

Номер произв C3D30065D
Описание Silicon Carbide Schottky Diode
Производители Cree
логотип Cree логотип 

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C3D30065D Даташит, Описание, Даташиты
C3D30065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM =  650 V
IF (TC=135˚C) =   36 A**
Qc =  89 nC**
650 Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Maximum Ratings (TC=25°C unless otherwise specified)
Part Number
C3D30065D
Package
TO-247-3
Marking
C3D30065
Symbol
Parameter
Value
Test Conditions
Note
VRRM Repetitive Peak Reverse Voltage
650 V
VRSM Surge Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
IF
Continuous Forward Current
(Per Leg/Device)
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation(Per Leg/Device)
Diode dV/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
650 V
39/78
18/36
15/30
66*
46*
162
150
1400
1200
150
65
200
131*
112.5*
-55 to +175
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=145˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-600V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
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C3D30065D Даташит, Описание, Даташиты
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.45
2.0
18.5
38.5
44.5
877.5
80
64
1.8
2.4
95
378
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 16 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
6.2
μJ VR = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1*
0.5**
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance (Per Leg)
45
40 TJ = -55 °C
35 TJ = 25 °C
30 TJ = 75 °C
25 TJ = 125 °C
20 TJ = 175 °C
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward VVoFl(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900
ReverseVVRo(ltVag)e, VR (V)
Figure 2. Reverse Characteristics
2 C3D30065D Rev. -, 09-2016









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C3D30065D Даташит, Описание, Даташиты
Typical Performance (Per Leg)
140
120
100
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
40
20
0
25 50 75 100 125 150 175
TC ˚C
Figure 3. Current Derating
70
Conditions:
60 TJ = 25 °C
50
40
30
20
10
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC ˚C
1000
900
800
700
600
500
400
300
200
100
0
0
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1 10 100
ReversVe VRo(ltVag)e, VR (V)
1000
Figure 6. Capacitance vs. Reverse Voltage
3 C3D30065D Rev. -, 09-2016










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