|
|
PDF CGHV59070 Data sheet ( Hoja de datos )
| Número de pieza | CGHV59070 | |
| Descripción | RF Power GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CGHV59070 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange and pill package.
PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0
Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz
Power Gain at 50 V
13.7 14.2 14.5 14.6 14.3
Output Power at 50 V
84
93 101 102 95
Drain Efficiency at 50 V
55
56
57
56
54
Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)
5.8 GHz
13.7
84
50
5.9 GHz
13.3
76
48
Units
dB
W
%
Features
• 4.4 - 5.9 GHz Operation
• 90 W POUT typical at 50 V
• 14 dB Power Gain
• 55 % Drain Efficiency
• Internally Matched
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
• Troposcatter Communications
• Beyond Line of Sight - BLOS
• Satellite Communications
Subject to change without notice.
www.cree.com/rf
1
1 page  
Simulated Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
4400
4600
4800
5000
5200
5300
5400
5500
5600
5700
5800
5900
Z Source
2.6 - j12.9
3.8 - j14.2
5.8 - j15.3
8.8 - j15.4
8.8 - j14.7
8.5 - j14.5
8.1 - j14.2
7.8 - j13.9
7.5 - j13.6
7.2 - j13.3
6.9 - j13.3
6.6 - j12.7
Z Load
14.0 - j6.9
15.0 - j6.7
16.0 - j7.0
16.7 - j8.0
17.1 - j9.1
16.9 - j10.0
16.5 - j10.7
15.4 - j11.4
15.4 - j12.0
14.6 - j12.5
13.8 - j12.8
12.9 - j13.1
Note 1. VDD = 50 V, IDQ = 150 mA in the 440224 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to
maintain amplifier stability.
CGHV59070 Power Dissipation De-rating Curve, CW and Pulse (100 μsec, 10%)
Power dissipation derating curve vs. Max TCase
CW & Pulse (100 uS/ 10% duty)
80
70
Pulsed
CW
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250
Flange Temperature (°C)
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV59070 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CGHV59070.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CGHV59070 | RF Power GaN HEMT | Cree |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |