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CJ2324-G PDF даташит

Спецификация CJ2324-G изготовлена ​​​​«Comchip» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв CJ2324-G
Описание N-Channel MOSFET
Производители Comchip
логотип Comchip логотип 

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CJ2324-G Даташит, Описание, Даташиты
MOSFET
CJ2324-G (N-Channel MOSFET )
RoHS Device
Comchip
SMD Diode Specialist
V(BR)DSS
100V
RDS(on)MAX
234mΩ @ 10V
267mΩ @ 6V
278mΩ @ 4.5V
Features
- TrenchFET Power MOSFET
- Low RDS(ON).
- Surface mount package.
Mechanical data
- Case: SOT-23, molded plastic.
Circuit diagram
ID
2A
SOT-23
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.007(0.150)
0.002(0.080)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
3
D
Dimensions in inches and (millimeter)
1
G
S
2
1. GATE
2. SOURCE
3. DRAIN
Absolute Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current
ID
Pulsed drain current
IDM*
Power dissipation
Thermal resistance from junction to ambient
PD
RΘJA
Junction temperature
TJ
Storage temperature
TSTG
Lead temperature for soldering purposes(1/8” form case for 10 s)
* Repetitive rating: Pulse width limited by junction temperature.
TL
Value
100
±20
2
8
350
357
-40 to +150
-55 to +150
260
Unit
V
V
A
A
mW
°C/W
°C
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR45
Comchip Technology CO., LTD.
REV:A
Page 1









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CJ2324-G Даташит, Описание, Даташиты
MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR) DSS VGS = 0V , ID = 250µA
Zero gate voltage drain current
IDSS
VDS = 100V , VGS = 0V
Gate-body leakage current
IGSS
VGS = ±20V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS = VGS , ID = 250µA
VGS = 10V , ID = 1.5A
Drain-source on-resistance (note 1)
RDS(on) VGS = 6V , ID = 1A
VGS = 4.5V , ID = 0.5A
Forward transconductance (note 1)
gFS VDS = 20V , ID = 1.5A
Diode forward voltage (note 1)
VSD IS = 1.3A , VGS = 0V
DYNAMIC PARAMETERS (note2)
Input capacitance
ciss
Output capacitance
Coss
VDS=50V , VGS=0V, f=1MHZ
Reverse transfer capacitance
Crss
Gate resistance
Rg F=1MHZ
SWITCHING PARAMETERS (note2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=50V, VGEN=4.5V
RL=39Ω , RG=1Ω, ID=1.3A
Turn-on fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
VDS=50V , VGS=4.5V
ID=1.6A
Qgd
Note:
1. Pulse test : Pulse width300µs, duty cycle0.5% .
2. Guaranteed by design, not subject to production testing.
Min
100
1.2
0.3
Comchip
SMD Diode Specialist
Typ Max Units
V
1 µA
±100
nA
2.8 V
234
267 mΩ
278
2S
1.2 V
190
22 pF
13
2.8
45
39
26
20
5.8
0.75
1.4
nS
nC
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR45
Comchip Technology CO., LTD.
REV:A
Page 2









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CJ2324-G Даташит, Описание, Даташиты
MOSFET
TYPICAL CHARACTERISTICS ( CJ2324-G )
Comchip
SMD Diode Specialist
10
Pulsed
9
Fig.1 - Output Characteristics
8
VGS=10V,12V
VGS=8V
7
6 VGS=3.8V
5
VGS=3.5V
4
3
2
VGS=3V
1
0
0 12 345
Drain to Soruce Voltage, VDS (V)
280
Ta=25°C
Pulsed
260
Fig.3 - RDS(ON) — ID
240
VGS=4.5V
220
200
180
160
0
VGS=6V
VGS=10V
1234
Drain Current, ID (A)
5
Fig.2 - Transfer Characteristics
5.0
4.5 VDS = 3V
Pulsed
4.0
3.5
3.0
2.5
Ta=100°C
Ta=25°C
2.0
1.5
1.0
0.5
0
012345
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
900
800
700
600 ID=0.8A
500
400
Ta=100°C
Pulsed
300
Ta=25°C
200 Pulsed
100
0
0 24 68
Gate To Source Voltage, VGS (V)
6
10
Fig.5 - IS — VSD
6
Fig.6 - Threshold Voltage
2.1
2.0
1
1.9
Ta=100°C
0.1 Pulsed
Ta=25°C
Pulsed
1.8
ID=250uA
1.7
0.01 1.6
1.5
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source to Drain Voltage, VSD (mV)
1.6
1.4
25
50 75 100
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR45
Comchip Technology CO., LTD.
125
REV:A
Page 3










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