CJAA3134K PDF даташит
Спецификация CJAA3134K изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJAA3134K |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
:%)%3( Plastic-Encapsulate MOSFETs
CJAA3134K N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
380 mΩ@4.5V
450m Ω@2.5V
800 mΩ@1.8V
ID
0.75A
WBFBP-03E
FEATURE
z Lead Free Product is Acquired
z Surface Mount Package
z N-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Complementary to CJAA3139K
1.GATE
2.SOURCE
3.DRAIN
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small
Portable Electronics
z Logic Level Shift
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
20
±12
0.75
1.8
100
1250
150
-55~ 150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
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B ,Nov,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
Gate threshold voltage (note 2)
Drain-source on-resistance(note 2)
IGSS
VGS(th)
RDS(on)
VGS =±12V, VDS = 0V
VDS =VGS, ID =250µA
VGS =4.5V, ID =0.65A
VGS =2.5V, ID =0.55A
Forward tranconductance(note 2)
VGS =1.8V, ID =0.45A
gFS VDS =10V, ID =0.8A
Diode forward voltage
VSD IS=0.15A, VGS = 0V
DYNAMIC PARAMETERS(note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS =16V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time (note 3)
td(on)
Turn-on rise time (note 3)
Turn-off delay time (note 3)
Turn-off fall time (note 3)
tr
td(off)
tf
VDD=4.5V,VGS=10V,
ID=500mA,RGEN=10Ω
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle≤2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Graranted by design,not subject to producting.
Min Typ Max Unit
20 V
1 µA
±50 uA
0.35 1 V
380 mΩ
450 mΩ
800 mΩ
1.6 S
1.2 V
79 120 pF
13 20 pF
9 15 pF
6.7 ns
4.8 ns
17.3 ns
7.4 ns
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B ,Nov,2016
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7\SLFDO&KDUDFWHULVWLFV
5.0
T =25℃
4.5 a
Pulsed
4.0
3.5
Output Characteristics
V =4V,5V
GS
V =3V
GS
V =2.5V
GS
3.0
V =2V
2.5 GS
2.0
1.5
1.0
V =1.5V
GS
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE V (V)
DS
4.0
V =3V
DS
3.5 Pulsed
Transfer Characteristics
3.0
2.5
T =25℃
a
T =100℃
a
2.0
1.5
1.0
0.5
0.0
0123
GATE TO SOURCE VOLTAGE V (V)
GS
4
500
T =25℃
a
Pulsed
450
400
RDS(ON) —— ID
V =1.8V
GS
350
V =2.5V
GS
300
V =4.5V
GS
250
200
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
DRAIN CURRENT I (A)
D
800
700
600
500
400
300
200
100
1
RDS(ON) —— VGS
I =0.65A
D
Pulsed
T =100℃
a
T =25℃
a
234
GATE TO SOURCE VOLTAGE V (V)
GS
5
2
Pulsed
1
IS —— VSD
0.1
T =100℃
a
T =25℃
a
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
SOURCE TO DRAIN VOLTAGE V (V)
SD
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1.6
3
0.8
0.7
0.6
0.5
0.4
0.3
0.2
25
Threshold Voltage
I =250uA
D
50 75 100
JUNCTION TEMPERATURE T (℃)
j
125
B ,Nov,2016
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