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PDF CJAC10H03 Data sheet ( Hoja de datos )
| Número de pieza | CJAC10H03 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC10H03
V(BR)DSS
30 V
N-Channel Power MOSFET
RDS(on)MAX
ID
2.5mΩ@10V
3.5mΩ@4.5V
100A
PDFNWB5×6-8L
DESCRIPTION
The CJAC10H03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and
Excellent package for good heat dissipation
Special process technology for high ESD
current
Good stability and uniformity with high EAS
APPLICATIONS
capability
SMPS and general purpose applications
Hard switched and high frequency circuits
Power switching application
Uninterruptible power supply
MARKING
CJAC10H03 = Part No.
Solid dot=Pin1 indicator
XXX=Date Code
EQUIVALENT CIRCUIT
D DDD
8 7 65
1 234
S S SG
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Power Dissipation
IDM
PD (1)
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Limit
30
±20
100
400
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-2,Mar,2016
1 page  
ZZZFMHOHFFRP
5
$20DU
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJAC10H03.PDF ] | |
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