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PDF CJD04N60A Data sheet ( Hoja de datos )
| Número de pieza | CJD04N60A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJD04N60A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60A N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
3.0Ω@10V
ID
4A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-251S
1. GATE
2. DRAIN
3. SOURCE
1 23
MARKING
EQUIVALENT CIRCUIT
CJD04N60A
XXX
CJD04N60A =Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
www.cj-elec.com
1
Value
600
±30
4.0
16
260
100
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
C,May,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJD04N60A.PDF ] | |
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