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CJD04N60 PDF даташит

Спецификация CJD04N60 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJD04N60
Описание N-Channel Power MOSFET / Transistor
Производители JCET
логотип JCET логотип 

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CJD04N60 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-2516Plastic-Encapsulate MOSFETS
CJD04N60 600V N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
  3.0Ω@10V
ID
4A
TO-251S
 
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
1 23
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJD044N60
z XXX
CJD04N60 = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
100
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
E,May,2016









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CJD04N60 Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
600
V
Drain-source diode forward voltage(note2)
VSD VGS = 0V, IS =4.0A
1.5
Zero gate voltage drain current
Gate-body leakage current, forward(note2)
Gate-body leakage current, reverse(note2)
IDSS
IGSSF
IGSSR
VDS =600V, VGS =0V
VDS =0V, VGS =30V
VDS =0V, VGS =-30V
25
100
-100
µA
nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =2.0A
VDS =50V, ID =2A
2.0 3.0 4.0
V
2.0 3.0
2.0 2.6
S
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
540 760
125 180 pF
8.0 20
Switching characteristics
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =480V,VGS =10V,ID =4.0A
VDD=300V, VGS=10V,
RG=9.1, ID =4.0A
5.0 10
2.7 nC
2.0
12 20
7.0 10
ns
19 40
10 20
Notes :
1. L=30mH, IL=4 A, VDD=100V, VGS=10V,RG=25,Starting TJ=25.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. These parameters have no way to verify.
www.cj-elec.com
A,Nov,2011
2 E,May,2016









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CJD04N60 Даташит, Описание, Даташиты
Typical Characteristics
6
Pulsed
5
Output Characteristics
VGS= 6V8V10V
4
3
VGS=5V
2
1
VGS=4.5V
0 VGS=4V
0 10 20 30 40
DRAIN TO SOURCE VOLTAGE VDS (V)
5
Ta=25
Pulsed
4
3
R
DS(ON)
——
I
D
VGS=10V
2
1
0
01234
DRAIN CURRENT ID (A)
4
Pulsed
1
I
S
——
V
SD
5
Ta=100
Ta=25
0.1
0.01
1E-3
0.0
0.4 0.8 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.6
2.0
VDS=10V
Pulsed
1.6
Transfer Characteristics
1.2
0.8
Ta=100
Ta=25
0.4
0.0
0
123456
GATE TO SOURCE VOLTAGE VGS (V)
7
R —— V
DS(ON)
GS
16
12
Ta=100
8
Ta=25
Pulsed
ID=2A
4
0
2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ ()
www.cj-elec.com
3
E,May,2016










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