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PDF CJD30N10 Data sheet ( Hoja de datos )

Número de pieza CJD30N10
Descripción N-Channel Power MOSFET / Transistor
Fabricantes JCET 
Logotipo JCET Logotipo



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No Preview Available ! CJD30N10 Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-256 Plastic-Encapsulate MOSFETS
CJ'30N10 N-Channel Power MOSFET
V(BR)DSS
100V
RDS(on)MAX
  31mΩ@10V
ID
30 A
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
TO-256
1. GATE
2. DRAIN
1 23
3. SOURCE
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
High density cell design for ultra low RDS(on)
Special process technology for high ESD capability
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Good stability and uniformity with high EAS
APPLICATIONS
Hard switched and high frequency circuits
Uninterruptible power supply
Power switching application
MARKING
EQUIVALENT CIRCUIT
CJD30N10
XXX
CJD30N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
100
±20
30
120
156
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
/W
www.cj-elec.com
1
A-1,Jul,2016

1 page





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