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CJQ4406 PDF даташит

Спецификация CJQ4406 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJQ4406
Описание N-Channel Power MOSFET / Transistor
Производители JCET
логотип JCET логотип 

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CJQ4406 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4406 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
  12mΩ@10V 
30 V
16mΩ@4.5V  
ID
10A
DESCRIPTION
The CJQ4406 uses advanced trench technology to provide excellent R DS(ON)
with low gate charge. This device is suitable for high side switch in SMPS and
general purpose applications.
APPLICATIONS
z High side switch in SMPS
z Load Switch
SOP8
MARKING
Front side
Q4406= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25, Starting TJ = 25°C
Equivalent Circuit
D DDD
8 7 65
1 234
S S SG
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
10
40
105
1.4
89
150
-55 ~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
mJ
W
/W
A-3,Feb,2016









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CJQ4406 Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
Gate-body leakage current
IDSS VDS =30V, VGS =0V
IGSS VDS =0V, VGS =±20V
On characteristics (note1)
Gate-threshold voltage
Static drain-source on-sate resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =12A
VGS =4.5V, ID =10A
Forward transconductance
gFS VDS =5V, ID =10A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =15V,VGS =0V,
f =1MHz
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gate Resistance
Drain-Source Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VDS=15V, VGS=5V,
ID=10A
VDD=25V,ID=1A,
VGS=10V,RG=6,
RL=6.7
f =1MHz, VDS=0V,
VGS=0V,
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
VSD VGS =0V, IS=10A
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width300µs, duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
Min Typ
Max Unit
30 V
1 µA
±100
nA
1.0 1.5
7.6
11
15
3.0 V
12 m
16 m
S
1550
300
180
pF
13
5.5 nC
3.5
30
20
ns
100
80
0.8 2.4
1.2 V
10 A
40 A
www.cj-elec.com
2
A-3,Feb,2016









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CJQ4406 Даташит, Описание, Даташиты
7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
10
V = 3V,4V,6V,8V
GS
T =25
a
Pulsed
8
V = 2.8V
GS
6
4
2 V = 2.5V
GS
0
012345
DRAIN TO SOURCE VOLTAGE V (V)
DS
20
T =25
18 a
Pulsed
16
14
12
10
8
6
4
2
0
2
R
DS(ON)
——
I
D
V =4.5V
GS
V =10V
GS
468
DRAIN CURRENT I (A)
D
10
12
10
Pulsed
I
S
——
V
SD
12
T =100
a
T =25
a
1
Transfer Characteristics
10
V =3V
DS
Pulsed
8
6
4
T =100
a
T =25
a
2
0
012345
GATE TO SOURCE VOLTAGE V (V)
GS
R —— V
DS(ON)
GS
60
Pulsed
I =12A
D
50
40
30
T =100
a
20
10
T =25
a
0
2468
GATE TO SOURCE VOLTAGE V (V)
GS
10
Threshold Voltage
2.0
1.5
I =250uA
D
1.0
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.4
0.5
25
50 75 100
JUNCTION TEMPERATURE T ()
J
125
www.cj-elec.com
3
A-3,Feb,2016










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