CJQ9435 PDF даташит
Спецификация CJQ9435 изготовлена «JCET» и имеет функцию, называемую «P-Channel Power MOSFET». |
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Детали детали
Номер произв | CJQ9435 |
Описание | P-Channel Power MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ9435
V(BR)DSS
-30V
P-Channel Power MOSFET
RDS(on)MAX
60 mΩ@-10V
70 mΩ@-6V
105 mΩ@-4.5V
ID
-5.1A
DESCRIPTION
The CJQ9435 uses advanced trench technology to provide excellent
RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a low side switch in Notebook
CPU core power conversion.
APPLICATIONS
z Battery Switch
z Load Switch
SOP8
MARKING:
Q9435= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
D DDD
8765
12 3 4
S SSG
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=-50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-30
±20
-5.1
-20
20
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
ZZZFMHOHFFRP
1
IMar6
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026)(7 (/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
Gate-body leakage current
IDSS VDS =-24V, VGS =0V
IGSS VDS =0V, VGS =±20V
On characteristics (note1)
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
VGS =-10V, ID =-4.6A
Static drain-source on-sate resistance
RDS(on) VGS =-6V, ID =-4.1A
VGS =-4.5V, ID =-2A
Forward transconductance
gFS VDS =-15V, ID =-4.6A
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gate Resistance
Drain-Source Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VDS=-15V, VGS=-10V,
ID=-4.6A
VDD=-15V,ID=-1A,
VGS=-10V,RG=6Ω,
RL=15Ω
f =1MHz, VDS=0V,
VGS=0V,
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
VSD VGS =0V, IS=-2.6A
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production testing.
Min Typ
-30
-1.0 -1.5
50
60
65
5
4
6.3
5.8
Max Unit
-1
±100
V
µA
nA
-2.0 V
60 mΩ
70 m Ω
105 m Ω
S
40
nC
30
60
ns
120
100
Ω
-1.2 V
-5.1 A
-20 A
ZZZFMHOHFFRP
2
IMar6
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7\SLFDO&KDUDFWHULVWLFV
-20
Ta=25℃
Pulsed
-15
Output Characteristics
VGS=-10、-5.0、-4.5、-4.0V
VGS=-3.5V
VGS=-3.0V
-10
-5
-0
-0
100
80
60
40
-1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE VDS (V)
-5
R
DS(ON)
——
I
D
Ta=25℃
Pulsed
VGS=-4.5V
VGS=-10V
20
-0 -2 -4 -6 -8
DRAIN CURRENT ID (A)
-10
Ta=25℃
Pulsed
-1
I —— V
S SD
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4 -0.6 -0.8 -1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
-10
-1.2
-5
Ta=25℃
Pulsed
-4
Transfer Characteristics
-3
-2
-1
-0
-0
180
150
-1 -2 -3
GATE TO SOURCE VOLTAGE VGS (V)
-4
R
DS(ON)
——
V
GS
Ta=25℃
Pulsed
120
90
ID=-4.1A
60
30
-2 -4 -6 -8 -10
GATE TO SOURCE VOLTAGE VGS (V)
ZZZFMHOHFFRP
3
IMar6
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CJQ9435 | P-Channel Power MOSFET | JCET |
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