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CJT04N15 PDF даташит

Спецификация CJT04N15 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJT04N15
Описание N-Channel Power MOSFET / Transistor
Производители JCET
логотип JCET логотип 

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CJT04N15 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate MOSFETS
CJT04N15
V(BR)DSS
150V
N-Channel Power MOSFET
RDS(on)MAX
 160mΩ@10V
ID
4A
GENERAL DESCRIPTION
This CJT04N15 use advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.It
can be used in a wide variety of applications.
SOT-223
 
1. GATE
2. DRAIN
3. SOURCE
12
3
FEATURE
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current
z Excellent package for good heat dissipation
MARKING
T04N15
151
T04N15= Device code
151 =Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
RθJA
TJ
TSTG
TL
Value
150
±20
4
16
125
150
-55 ~+150
260
Unit
V
A
/W
www.cj-elec.com
1
A-2,May,2016









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CJT04N15 Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage current (note2)
VSD VGS = 0V, IS =2.0A
IDSS VDS =150V, VGS =0V
IGSS VDS =0V, VGS 20V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =4.0A
VDS =15V, ID =4A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS =75V,VGS =10V,ID =1.5A
VDS=75V, VGS=10V,
RG=6, ID =1.0A,RL=75Ω
Turn-off fall time (note3)
tf
Notes :
1. Repetitive Rating:Pulse width limited by maximum junction temperature.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. These parameters have no way to verify.
Min Typ Max Unit
150 V
1.2
1 µA
±100 nA
1.5 2.0 2.5 V
130 160 m
5S
900
115 pF
70
19
5.5 nC
7
8
10
ns
20
15
www.cj-elec.com
2
A-2,May,2016









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CJT04N15 Даташит, Описание, Даташиты
Typical Characteristics
20
T =25
a
Pulsed
16
Output Characteristics
V =4V,5V,6V
GS
V =3.5V
GS
12
V =3.2V
8 GS
4 V =3V
GS
0
0 5 10 15 20
DRAIN TO SOURCE VOLTAGE V (V)
DS
20
V =10V
DS
Pulsed
16
Transfer Characteristics
12
8
T =100
a
T =25
a
4
0
024
GATE TO SOURCE VOLTAGE V (V)
GS
6
300
T =25
a
Pulsed
250
R
DS(ON)
——
I
D
200
150
V =10V
GS
100
50
0
12345
DRAIN CURRENT I (A)
D
6
500
400
300
200
100
0
2
R
DS(ON)
——
V
GS
I =4A
D
Pulsed
T =100
a
T =25
a
468
GATE TO SOURCE VOLTAGE V (V)
GS
10
5
Pulsed
1
I
S
——
V
SD
Threshold Voltage
3.0
2.5
0.1
T =100
a
0.01
T =25
a
2.0 I =250uA
D
1.5
1.0
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.4
0.5
25
50 75 100
JUNCTION TEMPERATURE T ()
j
125
www.cj-elec.com
3
A-2,May,2016










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