DataSheet26.com

CJV01N65B PDF даташит

Спецификация CJV01N65B изготовлена ​​​​«ZPSEMI» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJV01N65B
Описание N-Channel Power MOSFET / Transistor
Производители ZPSEMI
логотип ZPSEMI логотип 

2 Pages
scroll

No Preview Available !

CJV01N65B Даташит, Описание, Даташиты
CJV01N65B
TO-92 Plastic-Encapsulate MOSFETS
CJV01N65B N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-92
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
Value
650
±20
1
4
5
625
200
-55 ~+150
260
Unit
V
A
mJ
mW
/W
www.zpsemi.com
1 of 2









No Preview Available !

CJV01N65B Даташит, Описание, Даташиты
CJV01N65B
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage curren (note2)
V(BR)DSS
VSD
IDSS
IGSS
VGS = 0V, ID =250µA
VGS = 0V, IS =1A
VDS =600V, VGS =0V
VDS =0V, VGS 20V
650
V
1.5
100 µA
±100 nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th) VDS =VGS, ID =250µA 2.0 4.0 V
RDS(on) VGS =10V, ID =0.6A
14
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
210
28 pF
4.2
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =480V,VGS =10V,ID =4.0A
VDD=300V, VGS=10V,
RG=18, ID =1A
5.0 10
2.7 nC
2.0
8
21
ns
18
24
Notes :
1. L=10mH, IL=1 A, VDD=50V, VGS=10V,RG=25,Starting TJ=25.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. These parameters have no way to verify.
www.zpsemi.com
2 of 2










Скачать PDF:

[ CJV01N65B.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CJV01N65BN-Channel Power MOSFET / TransistorJCET
JCET
CJV01N65BN-Channel Power MOSFET / TransistorZPSEMI
ZPSEMI

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск