HCA60R150T PDF даташит
Спецификация HCA60R150T изготовлена «SemiHow» и имеет функцию, называемую «600V N-Channel Super Junction MOSFET». |
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Детали детали
Номер произв | HCA60R150T |
Описание | 600V N-Channel Super Junction MOSFET |
Производители | SemiHow |
логотип |
7 Pages
No Preview Available ! |
Jan 2016
HCA60R150T
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
650
22
0.15
41
Unit
V
A
ȍ
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
TV power & LED Lighting Power
Package & Internal Circuit
TO-247
GD S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
600
ρ30
22.0
13.9
60.0
650
192
-55 to +150
260
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.65
40
Units
/W
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 11 A
2.0
--
gFS Forward Transconductance
VDS = 10, ID = 11 A
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 22 A,
RG = 25
VDS = 480 V, ID = 22 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 22 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 22 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ȝV'XW\&\FOH
-- 4.0
0.13 0.15
18.8 --
-- --
-- 10
-- 100
-- ρ100
1600
225
14
2100
295
18.5
48 104
108 220
176 360
50 108
41 53
8 --
15 --
-- 22
-- 60
-- 1.2
440 --
5 --
V
S
V
Ꮃ
Ꮃ
Ꮂ
Ꮔ
Ꮔ
Ꮔ
Ꭸ
Ꭸ
Ꭸ
Ꭸ
nC
nC
nC
A
V
Ꭸ
ȝ&
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΒΟ͑ͣͧ͑͢͡
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Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΒΟ͑ͣͧ͑͢͡
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