HCS70R350E PDF даташит
Спецификация HCS70R350E изготовлена «SemiHow» и имеет функцию, называемую «700V N-Channel Super Junction MOSFET». |
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Детали детали
Номер произв | HCS70R350E |
Описание | 700V N-Channel Super Junction MOSFET |
Производители | SemiHow |
логотип |
7 Pages
No Preview Available ! |
July 2016
HCS70R350E
700V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Higher dv/dt ruggedness
Application
Lighting
Hard Switching PWM
Server Power Supply
Charger
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
750
12
0.35
16
Unit
V
A
Ω
nC
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…480V
Reverse diode dv/dt, VDS=0…480V, IDS≤ID
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
±30
12.0 *
7.6 *
36.0 *
215
50
15
32
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.9
62.5
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0, July 2016
No Preview Available ! |
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 6 A
2.5
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂
VDS = 700 V, VGS = 0 V
VDS = 560 V, TJ = 125℃
VGS = ±30 V, VDS = 0 V
700
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 350 V, ID = 12 A,
RG = 25 Ω
VDS = 560 V, ID = 12 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 6 A, VGS = 0 V
diF/dt = 100 A/μs
--
--
--
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3.2A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
-- 4.5
0.3 0.35
-- --
-- 1
-- 100
-- ±100
1000
64
2.1
--
--
--
38 --
19 --
56 --
16 --
16 21
5.7 --
3.8 --
-- 12
-- 36
-- 1.4
285 --
2.9 --
V
Ω
V
㎂
㎂
㎁
㎊
㎊
㎊
㎱
㎱
㎱
㎱
nC
nC
nC
A
V
㎱
μC
◎ SEMIHOW REV.A0, July 2016
No Preview Available ! |
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 140V
VDS = 350V
VDS = 560V
8
6
4
2
∗ Note : ID = 12A
0
0 5 10 15 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0, July 2016
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