CJA03N10 PDF даташит
Спецификация CJA03N10 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJA03N10 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA03N10 N-Channel MOSFET
V(BR)DSS
100 V
RDS(on)MAX
14 0mΩ@ 10V
ID
3A
SOT-89-3L
DESCRIPTION
The CJA03N10 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge .This device is suitable for use
in a wide variety of applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z Lead free product is acquired
z Special process technology for high ESD capability
z High density cell design for ultra low RDS(on)
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
APPLICATION
z Power switching application
z Hard switching and high frequency circuits
z Uninterruptible power supply
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
100
±20
3
20
0.5
250
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
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D,Apr,2015
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 3)
Drain-source on-resistance (note 3)
Forward transconductance (note 3)
Diode forward voltage (note 3)
V (BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
VGS = 0V, ID =250µA
VDS =100V,VGS = 0V
VGS =±20V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =5A
VDS =5V, ID =2.9A
IS=3A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total gate charge
Qg
Gate-source Charge
Qgs
Gate-drain Charge
Qgd
VGS=10V,VDS=30V,
RGEN=2.5Ω, ID =2A, RL=15Ω
VDS =30V,VGS =10V,ID =3A
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
100 V
1 µA
±100 nA
1 2V
140 mΩ
3S
1.2 V
690 pF
120 pF
90 pF
11 ns
7.4 ns
35 ns
9.1 ns
15.5 nC
3.2 nC
4.7 nC
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Typical Characteristics
20
Pulsed
15
10
Output Characteristics
VGS=10V
3.5V
VGS=4V
3V
5
VGS=2.5V
0
01234
DRAIN TO SOURCE VOLTAGE VDS (V)
5
20
VDS=10V
Pulsed
15
Transfer Characteristics
10
Ta=100℃
5
Ta=25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE TO SOURCE VOLTAGE VGS (V)
300
Ta=25℃
Pulsed
250
200
R ——
DS(ON)
I
D
VGS=2.5V
150 VGS=10V
100
R
DS(ON)
——
V
GS
500
Ta=25℃
Pulsed
400
300
200 ID=5A
100
50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN CURRENT ID (A)
10
Ta=25℃
Pulsed
1
I
S
——
V
SD
0
0 3 6 9 12 15 18
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
1.9
1.8
0.1 1.7
ID=250uA
0.01 1.6
1E-3
1.5
1E-4
400
500
600
700
800
900
1000
1100
SOURCE TO DRAIN VOLTAGE VSD (mV)
1200
www.cj-elec.com
3
1.4
25
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
D,Apr,2015
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