(PDF) CJL6601 Datasheet - P- & N-Channel MOSFET

Número de pieza	CJL6601
Descripción	P- & N-Channel MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. SOT-23-6L Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage N-channel VDS 30 P-channel -30 V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.4 IDM 30 ±12 -2.3 -30 V A A Power Dissipation PD 0.35 0.35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temperature Tstg -55~+150 -55~+150 ℃ 1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on t≤10s thermal rasistance rating. 2. Repetitive rating,pulse with limited by junction temperature. A -1,Jun,2012 1 page

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PDF CJL6601 Data sheet ( Hoja de datos )