(PDF) CJLJF3117P Datasheet - P-Channel MOSFET

Número de pieza	CJLJF3117P
Descripción	P-Channel MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB22-6L-A Plastic-Encapsulate MOSFETS CJLJF3117P P-Channel Power MOSFET FEATURE  Featuring a MOSFET and Schottky Diode  Independent Pinout Privides Circuit Design Flexibility  Low Profile (<0.8mm) for Easy Fit in Thin Environment  High Current Schottky Diode DFNWB22-6L-A APPLICATIONS  Optimized for Portable Applications like Cell Phones , Digital Cameras, Media Players, etc  DC-DC Buck Circuits  Li-ion Battery Applications  Color Display and Camera Flash Regulators MARKING: front Tape Drawing (Unit : mm) back MOSFET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -3.3 Power Dissipation PD 0.75 Thermal Resistance from Junction to Ambient Maximum Power Dissipation* Thermal Resistance from Junction to Ambient * RθJA PD RθJA 167 1.5 83.3 Storage Temperature Tj 150 Junction Temperature Tstg -55 ~+150 *Maximum power dissipation is calculated assuming that the device is mounted on infinite heat sink. Unit V A W ℃/W W ℃/W ℃ B,Nov,2012 1 page

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PDF CJLJF3117P Data sheet ( Hoja de datos )