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PDF CJP02N80 Data sheet ( Hoja de datos )

Número de pieza CJP02N80
Descripción N-Channel MOSFET
Fabricantes JCET 
Logotipo JCET Logotipo



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No Preview Available ! CJP02N80 Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP02N80
V(BR)DSS
800V
N-Channel Power MOSFET
RDS(on)MAX
  6.3Ω@10V
ID
2.4A
TO-220-3L
 
GENERAL DESCRIPTION
The CJP02N80 is an N-channel mode power MOSFET
using advanced technology to provide costomers with planar stripe.
This technology specializes in allowing a minimum on-state
resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode. The CJP02N80 is universally applied in high efficiency
switch mode power supply.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Excellent package for good heat dissipation
z High switching speed
z 100% avalanche tested
APPLICATION
z Power switching application
z DC/DC converters
MARKING
EQUIVALENT CIRCUIT
CJP02N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
123
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
800
±30
2.4
9.6
180
62.5
150
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
B,Apr,2016

1 page





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