CJP04N60A PDF даташит
Спецификация CJP04N60A изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJP04N60A |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60A
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
123
MARKING
EQUIVALENT CIRCUIT
CJP04N60A= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
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1
Value
600
±30
4.0
16
260
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
B,Apr,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
600
V
Drain-source diode forward voltage(note2)
VSD VGS = 0V, IS =4.0A
1.5
Zero gate voltage drain current
Gate-body leakage current (note2)
IDSS VDS =600V, VGS =0V
IGSS VDS =0V, VGS =±30V
25
±100
µA
nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =2.0A
VDS =50V, ID =2A
2.0 3.0 4.0
2.2 3.0
2.5
V
Ω
S
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
760
180 pF
20
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =480V,VGS =10V,ID =4.0A
VDD=300V, VGS=10V,
RG=9.1Ω, ID =4.0A
5.0 10
2.7 nC
2.0
20
10
ns
40
20
Notes :
1. L=30mH, IL=4 A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
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7\SLFDO&KDUDFWHULVWLFV
6
Pulsed
5
4
Output Characteristics
V = 6V、 8V、10V
GS
V =5V
GS
3
V =4.5V
GS
2
V =4V
1 GS
0
0 10 20 30 40
DRAIN TO SOURCE VOLTAGE V (V)
DS
5
T =25℃
a
Pulsed
4
3
RDS(ON) —— ID
V =10V
GS
2
1
0
02468
DRAIN CURRENT I (A)
D
10
Pulsed
IS —— VSD
10
1
T =100℃
a
0.1
T =25℃
a
0.01
1E-3
0.0
0.4 0.8 1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.6
2.0
V =10V
DS
Pulsed
1.6
Transfer Characteristics
1.2
0.8
T =100℃
a
T =25℃
a
0.4
0.0
01234567
GATE TO SOURCE VOLTAGE V (V)
GS
RDS(ON)—— VGS
16
12
T =100℃
a
8
T =25℃
a
Pulsed
I =2A
D
4
0
2 4 6 8 10 12
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
5
4
I =250uA
D
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE T (℃)
J
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B,Apr,2016
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