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PDF CJP05N60B Data sheet ( Hoja de datos )
| Número de pieza | CJP05N60B | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60B
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
2.5Ω@10V
ID
5A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
recovery time. Desighed for high voltage, high speed switching
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
123
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJP05N60B= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
600
±30
5
20
250
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,Apr,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJP05N60B.PDF ] | |
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