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CJP05N60 PDF даташит

Спецификация CJP05N60 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв CJP05N60
Описание N-Channel MOSFET
Производители JCET
логотип JCET логотип 

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CJP05N60 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60 N-Channel Power MOSFET
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low RDS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
2.Drain
TO-220-3L
1. GATE
2. DRAIN
3. SOURCE
1.Gate
3.Source
Maximum ratings (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note2,Ta=25)
Maximum Power Dissipation (note3,Tc=25)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
Tstg
Value
600
±30
4.5
250
2
120
62.5
150
-50 ~+150
Unit
V
A
mJ
W
/W
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CJP05N60 Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Gate-Body Leakage Current (note 4)
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Zero Gate Voltage Drain Current
Forward transconductance
Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
IGSS
V(BR) DSS
VGS(th)
IDSS
gfs
RDS(on)
Ciss
Coss
Crss
Test Condition
VDS =0V, VGS =±30V
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =600V, VGS =0V
VDS =40V, ID =2.25A
VGS =10V, ID =2.25A
VDS =25V,VGS =0V,
f =1MHz
Turn-On Delay Time (note 4)
td(on)
Rise Time (note 4)
Turn-Off Delay Time (note 4)
Fall Time (note 4)
tr
td(off)
tf
VDD=300V,ID=4.5A,
RG=25
Forward on Voltage (note 4)
VSD VGS =0V, IS=4.5A
Notes:
1. EAS condition: Tj=25, VDD=50V,RG=25,L=16mH,IAS=5A
2. This test is performed with no heat sink at Ta=25.
3. This test is performed with infinite heat sink at Tc=25.
4. Pulse Test : Pulse Width300µs, Duty Cycle 2%.
Min Typ Max Units
±100 nA
600
V
2.0 4.0
1 µA
2.9 S
2.5
670
72 pF
8.5
30
90
ns
85
100
1.4 V
C,Mar,2013









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CJP05N60 Даташит, Описание, Даташиты
Typical Characteristics
CJP05N60
10
Ta=25
Pulsed
8
6
4
2
Output Characteristics
VGS=20V,10V,5.5V
VGS=5.2V
VGS=5V
VGS=4.8V
VGS=4.5V
0
0 5 10 15 20 25 30
DRAIN TO SOURCE VOLTAGE VDS (V)
R
DS(ON)
——
I
D
4
Ta=25
Pulsed
3
2
VGS=10V
1
0
01234
DRAIN CURRENT ID (A)
10
Ta=25
Pulsed
I
S
——
V
SD
5
1
3.0
Ta=25
Pulsed
2.5
Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
02468
GATE TO SOURCE VOLTAGE VGS (V)
10
R
DS(ON)
——
V
GS
15
Ta=25
Pulsed
12
9
6 ID=2.25A
3
0
0 2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
0.1
0.01
0.0
0.3 0.6 0.9 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.5
C,Mar,2013










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