CJP07N60 PDF даташит
Спецификация CJP07N60 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJP07N60 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP07N60 N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-220-3L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
7
30.8
580
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage curren (note2)
VSD VGS = 0V, IS =7A
IDSS VDS =600V, VGS =0V
IGSS VDS =0V, VGS =±30V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =3.5A
Forward transconductance
gFS VDS =50V, ID =3.9A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
td(on)
tr
td(off)
tf
VDD=300V, VGS=10V,
RG=25Ω, ID =7A
Notes :
1. L=19.5mH, IL=7A, VDD=50V, VGS=10V,RG=0Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
Min Typ Max Unit
600
V
1.4
1 µA
±100 nA
2.0 4.0 V
1.3 Ω
5S
1600
190
25
pF
80
165
ns
160
120
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Typical Characteristics
Typical Characteristics
CJP07N60
12
Pulsed
Output Characteristics
VGS= 6V 、8V、10V
8
4 VGS=5V
VGS=4.5V
0
0 10 20 30
DRAIN TO SOURCE VOLTAGE VDS (V)
2.0
Ta=25℃
Pulsed
1.5
R
DS(ON)
——
I
D
1.0
VGS=10V
0.5
0.0
1234567
DRAIN CURRENT ID (A)
7
Pulsed
1
0.1
I
S
——
V
SD
Ta=100℃
Ta=25℃
3.0
VDS=10V
Pulsed
2.5
Transfer Characteristics
2.0
1.5
Ta=100℃
Ta=25℃
1.0
0.5
0.0
0
1234567
GATE TO SOURCE VOLTAGE VGS (V)
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
RDS(ON)——
V
GS
Pulsed
ID=3.5A
Ta=100℃
Ta=25℃
456789
GATE TO SOURCE VOLTAGE VGS (V)
10
Threshold Voltage
4.0
3.5
ID=250uA
3.0
0.01
2.5
1E-3
0
200 400 600 800
SOURCE TO DRAIN VOLTAGE VSD (mV)
1000
2.0
25
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
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