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CJP08N65 PDF даташит

Спецификация CJP08N65 изготовлена ​​​​«JCET» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв CJP08N65
Описание N-Channel MOSFET
Производители JCET
логотип JCET логотип 

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CJP08N65 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
  1.4Ω@10V
ID
8A
TO-220-3L
 
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
recovery time. Desighed for high voltage, high speed switching
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
High Current Rating
Lower RDS(on)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
123
MARKING
EQUIVALENT CIRCUIT
CJP08N65
XXX
CJP08N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
GD S
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
Value
650
±30
8
32
250
62.5
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
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CJP08N65 Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage
Zero gate voltage drain current
Gate-body leakage current
VSD VGS = 0V, IS =8A
IDSS VDS =650V, VGS =0V
IGSS VDS =0V, VGS 30V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =4A
VDS =50V, ID =3.9A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =520V,VGS =10V,ID =8A
VDD=325V, RG=25, ID =8A
Notes :
1. L=7mH, IL=8A, VDD=50V, RG=25, Starting TJ=25.
2. Pulse Test: Pulse width300µs, duty cycle 2%.
3. These parameters have no way to verify.
Min Typ Max Unit
650
V
1.4
10 µA
±100 nA
2.0 3.5
1.1
8.5
4.0
1.4
V
S
1255
135
16
pF
28 36
4.5 nC
12
45
130
ns
170
140
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C,Apr,2016









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CJP08N65 Даташит, Описание, Даташиты
7\SLFDO&KDUDFWHULVWLFV
8
Pulsed
Output Characteristics
VGS= 6V8V10V
VGS=5.5V
6
4
VGS=5V
2
VGS=4.5V
0
0 10 20 30 40
DRAIN TO SOURCE VOLTAGE VDS (V)
3.0
Ta=25
Pulsed
2.5
R
DS(ON)
——
I
D
2.0
1.5 VGS=10V
1.0
0.5
0.0
02468
DRAIN CURRENT ID (A)
10
Pulsed
I
S
——
V
SD
10
1
Ta=100
0.1
0.01
Ta=25
1E-3
0.0
0.2 0.4 0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
8
VDS=50V
Pulsed
6
Transfer Characteristics
Ta=100
4
Ta=25
2
0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)——
V
GS
8
Pulsed
7 ID=4A
6
5
4
3
Ta=100
2
1
Ta=25
0
2 4 6 8 10 12
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ ()
www.cj-elec.com
3
C,Apr,2016










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