CJP12N65 PDF даташит
Спецификация CJP12N65 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJP12N65 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
0.85Ω@10V
ID
12A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower RDS(on)
z Low Reverse Transfer Capacitance
z Fast Switching Capability
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
Equivalent Circuit
CJP12N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX= Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Single Pulsed Avalanche Energy (note2)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
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1
Value
650
±30
12
48
540
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
D,Feb,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
Gate-body leakage current (note3)
IDSS VDS =650V, VGS =0V
IGSS VDS =0V, VGS =±30V
On characteristics (note3)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =6A
Dynamic characteristics (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note1,3 4)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =520V,VGS =10V,ID =12A
VDD=325V, VGS=10V,
RG=4.7Ω, ID =12A
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note3)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD VGS = 0V, IS =12A
IS
ISM
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =7.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
4. These parameters have no way to verify.
Min Typ Max
650
1
±100
2.0 3.5
0.7
4.0
0.85
1800
200
25
42 54
8.6
21
30
90
160
90
1.4
12
48
Unit
V
µA
nA
V
Ω
pF
nC
ns
V
A
A
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Typical Characteristics
12
Pulsed
11
10
9
8
7
6
5
4
3
2
1
0
01
Output Characteristics
VGS= 10V、8V、6V
VGS=5V
VGS=4.5V
2345678
DRAIN TO SOURCE VOLTAGE VDS (V)
9 10
1.2
1.1 Ta=25℃
Pulsed
1.0
R
DS(ON)
——
I
D
0.9
0.8
0.7
0.6 VGS=10V
0.5
0.4
0.3
0.2
0.1
0.0
1 2 3 4 5 6 7 8 9 10 11 12
DRAIN CURRENT ID (A)
12
10
Pulsed
I
S
——
V
SD
1
Ta=100℃
0.1
Ta=25℃
0.01
0
200
400
600
800
1000
1200
SOURCE TO DRAIN VOLTAGE VSD (mV)
1400
1.6
VDS=10V
1.4 Pulsed
Transfer Characteristics
1.2
1.0
0.8
Ta=100℃
Ta=25℃
0.6
0.4
0.2
0.0
0123456
GATE TO SOURCE VOLTAGE VGS (V)
7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
RDS(ON)——
V
GS
Pulsed
ID=6A
Ta=100℃
Ta=25℃
456789
GATE TO SOURCE VOLTAGE VGS (V)
10
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ (℃)
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D,Feb,2016
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