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Número de pieza | CJP15H03 | |
Descripción | N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJP15H03 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP15H03 N-Channel Power MOSFET
DESCRIPTION
TO-220-3L-C
The CJP15H03 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Uninterruptible Power Supply
EQUIVALENT CIRCUIT
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=20V,L=1mH, RG=25Ω, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
www.cj-elec.com
1
Limit
30
±20
150
600
1700
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-2,Mar,2015
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CJP15H03.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJP15H03 | N-Channel MOSFET | JCET |
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