CJPF04N60 PDF даташит
Спецификация CJPF04N60 изготовлена «JCET» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CJPF04N60 |
Описание | N-Channel MOSFET |
Производители | JCET |
логотип |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220F
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF04N60
XXX
CJPF04N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
123
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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G,May,2016
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MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
Drain-source diode forward voltage(note2)
Zero gate voltage drain current
Gate-body leakage current, forward(note2)
Gate-body leakage current, reverse(note2)
V(BR)DSS
VSD
IDSS
IGSSF
IGSSR
VGS = 0V, ID =250µA
VGS = 0V, IS =4.0A
VDS =600V, VGS =0V
VDS =0V, VGS =30V
VDS =0V, VGS =-30V
600
V
1.5
25 µA
100
-100
nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =2.0A
VDS =50V, ID =2A
2.0 3.7 4.0
V
2.0 3.0
Ω
2.0 2.6
S
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
540 760
125 180 pF
8.0 20
Switching characteristics
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =480V,VGS =10V,ID =4.0A
VDD=300V, VGS=10V,
RG=9.1Ω, ID =4.0A
5.0 10
2.7 nC
2.0
12 20
7.0 10
ns
19 40
10 20
Notes :
1. L=30mH, IL=4 A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
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Typical Characteristics
Output Characteristics
6
Pulsed VGS= 8V、10V
5
VGS=6V
4
3 VGS=5.5V
2
1 VGS=5V
0
0 10 20 30 40
DRAIN TO SOURCE VOLTAGE VDS (V)
3.0
Ta=25℃
Pulsed
2.5
R
DS(ON)
——
I
D
VGS=10V
2.0
1.5
1.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN CURRENT ID (A)
4
Pulsed
1
I
S
——
V
SD
Ta=100℃
Ta=25℃
0.1
0.01
1E-3
0.0
0.4 0.8 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.6
2.0
VDS=10V
Pulsed
1.5
Transfer Characteristics
1.0
Ta=100℃
Ta=25℃
0.5
0.0
012345678
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)——
V
GS
12
Pulsed
ID=2A
10
8
Ta=100℃
Ta=25℃
6
4
2
0
2 4 6 8 10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
3 ID=250uA
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ (℃)
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